ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
MUN2135T1G
詳細を表示 DataSheets

MUN2135T1G

Product Overview

Category: Transistor
Use: Amplification and switching of electronic signals
Characteristics: Small signal NPN bipolar junction transistor, low power dissipation, high current gain
Package: SOT-23
Essence: High-performance small-signal switching
Packaging/Quantity: Tape & Reel, 3000 units per reel

Specifications

  • Collector-Base Voltage (VCBO): 50V
  • Collector-Emitter Voltage (VCEO): 45V
  • Emitter-Base Voltage (VEBO): 6V
  • Collector Current (IC): 100mA
  • Power Dissipation (PD): 225mW
  • Transition Frequency (fT): 250MHz
  • Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

  1. Base (B)
  2. Emitter (E)
  3. Collector (C)

Functional Features

  • High current gain
  • Low power dissipation
  • Fast switching speed
  • Small package size

Advantages and Disadvantages

Advantages: - High current gain for amplification - Small package size for space-constrained applications - Fast switching speed for efficient signal processing

Disadvantages: - Limited collector current compared to larger transistors - Limited power dissipation capability

Working Principles

The MUN2135T1G operates based on the principles of bipolar junction transistors, utilizing the control of current flow between its layers to amplify or switch electronic signals.

Detailed Application Field Plans

  1. Audio Amplification: Utilized in audio amplifiers for small signal amplification.
  2. Switching Circuits: Used in electronic switches for fast signal switching.
  3. Sensor Interfaces: Employed in sensor interface circuits for signal conditioning.

Detailed and Complete Alternative Models

  1. BC547B
  2. 2N3904
  3. 2SC945

Note: The above list is not exhaustive and there are several alternative models available in the market.

This comprehensive entry provides a detailed overview of the MUN2135T1G transistor, including its specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

技術ソリューションにおける MUN2135T1G の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is MUN2135T1G?

    • MUN2135T1G is a high-voltage, high-speed switching transistor commonly used in technical solutions for power management and control applications.

  2. What are the key features of MUN2135T1G?

    • The MUN2135T1G features a high voltage capability, fast switching speed, and low saturation voltage, making it suitable for various power management and control applications.

  3. In what types of technical solutions can MUN2135T1G be used?

    • MUN2135T1G can be used in applications such as DC-DC converters, motor control, power supplies, and LED lighting.

  4. What are the typical operating conditions for MUN2135T1G?

    • The typical operating conditions for MUN2135T1G include a maximum collector-emitter voltage of 350V, a continuous collector current of 500mA, and a maximum power dissipation of 625mW.

  5. How does MUN2135T1G compare to other similar transistors in its class?

    • MUN2135T1G offers a good balance of high voltage capability, fast switching speed, and low saturation voltage compared to other transistors in its class, making it a popular choice for many technical solutions.

  6. What are the recommended thermal management considerations for MUN2135T1G?

    • Proper heat sinking and thermal management are important for ensuring the reliable operation of MUN2135T1G in high-power applications. Adequate airflow and proper PCB layout are also crucial for thermal management.

  7. Are there any specific application notes or design guidelines available for using MUN2135T1G in technical solutions?

    • Yes, the manufacturer provides detailed application notes and design guidelines for incorporating MUN2135T1G into various technical solutions, including example circuits and layout recommendations.

  8. What are the common failure modes associated with MUN2135T1G and how can they be mitigated?

    • Common failure modes include thermal runaway, overvoltage stress, and excessive current. These can be mitigated by adhering to the recommended operating conditions, implementing proper protection circuits, and ensuring adequate thermal management.

  9. Can MUN2135T1G be used in automotive or industrial applications?

    • Yes, MUN2135T1G is suitable for use in automotive and industrial applications where high-voltage switching and power management are required.

  10. Where can I find reliable sources for purchasing MUN2135T1G for my technical solutions?

    • MUN2135T1G can be sourced from authorized distributors, online electronic component suppliers, and directly from the manufacturer's official channels to ensure authenticity and quality.