MPSH81_D27Z

Product Overview

Use

It is commonly used in electronic circuits for amplification and switching purposes.

Characteristics

Small size
High gain
Low noise
High frequency capability

Package

The MPSH81_D27Z is typically available in a small surface-mount package.

Essence

The essence of MPSH81_D27Z lies in its high performance and versatility in various electronic applications.

Packaging/Quantity

It is usually packaged in reels or trays, with quantities varying based on manufacturer specifications.

Specifications

Maximum Collector-Emitter Voltage: 45V
Maximum Collector Current: 500mA
Power Dissipation: 350mW
Transition Frequency: 250MHz
Noise Figure: 1dB

Detailed Pin Configuration

The MPSH81_D27Z has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

High voltage capability
Low distortion
Fast switching speed
Wide operating temperature range

Advantages

High gain
Low noise figure
Suitable for high-frequency applications
Compact size

Disadvantages

Limited power handling capacity
Sensitive to static discharge
Higher cost compared to standard transistors

Working Principles

MPSH81_D27Z operates based on the principles of bipolar junction transistors, utilizing the control of current flow for amplification and switching functions.

Detailed Application Field Plans

MPSH81_D27Z finds extensive use in: - RF amplifiers - Oscillators - Mixers - Switching circuits - Low-noise preamplifiers

Detailed and Complete Alternative Models

Some alternative models to MPSH81_D27Z include: - BC547 - 2N3904 - 2SC945 - PN2222

In conclusion, MPSH81_D27Z is a versatile semiconductor device with high-frequency capabilities, making it suitable for a wide range of electronic applications. Its compact size and low noise figure make it an attractive choice for designers working on high-performance circuits.

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技術ソリューションにおける MPSH81_D27Z の適用に関連する 10 件の一般的な質問と回答をリストします。

What is MPSH81_D27Z?
- MPSH81_D27Z is a high-frequency, low-power NPN transistor commonly used in RF and microwave applications.
What are the key specifications of MPSH81_D27Z?
- The key specifications include a maximum collector current of 100mA, a maximum power dissipation of 300mW, and a transition frequency of 4GHz.
In what technical solutions can MPSH81_D27Z be used?
- MPSH81_D27Z is commonly used in RF amplifiers, oscillators, mixers, and other high-frequency applications.
What are the typical operating conditions for MPSH81_D27Z?
- The typical operating conditions include a collector-emitter voltage (Vce) of 25V, a collector current (Ic) of 10mA, and a base current (Ib) of 1mA.
How does MPSH81_D27Z compare to similar transistors in its class?
- MPSH81_D27Z offers high transition frequency and low power consumption compared to similar transistors, making it suitable for high-frequency applications.
Can MPSH81_D27Z be used in low-noise amplifier designs?
- Yes, MPSH81_D27Z can be used in low-noise amplifier designs due to its low noise figure and high-frequency capabilities.
What are the recommended biasing and matching techniques for MPSH81_D27Z?
- Proper biasing using resistors and matching networks using capacitors and inductors are commonly employed to optimize the performance of MPSH81_D27Z in RF circuits.
Are there any application notes or reference designs available for using MPSH81_D27Z?
- Yes, various application notes and reference designs are available from semiconductor manufacturers and RF design resources for utilizing MPSH81_D27Z in different technical solutions.
What are the thermal considerations for MPSH81_D27Z in high-power applications?
- In high-power applications, proper heat sinking and thermal management should be considered to ensure the reliable operation of MPSH81_D27Z.
Where can I purchase MPSH81_D27Z and related evaluation boards or development kits?
- MPSH81_D27Z and associated evaluation boards or development kits can be purchased from authorized distributors of semiconductor components and RF/microwave equipment suppliers.