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MJE13007G

MJE13007G - Encyclopedia Entry

Product Overview

The MJE13007G belongs to the category of power transistors and is commonly used in electronic circuits for switching and amplification purposes. This NPN silicon transistor is known for its high voltage capability, making it suitable for various applications in power supply circuits, electronic ballasts, and other industrial and consumer electronic devices.

Basic Information

  • Category: Power Transistor
  • Use: Switching and Amplification
  • Characteristics: High Voltage Capability
  • Package: TO-220
  • Essence: NPN Silicon Transistor
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Collector-Emitter Voltage (VCEO): 400V
  • Collector Current (IC): 8A
  • Power Dissipation (PD): 80W
  • Transition Frequency (FT): 2 MHz
  • Operating Temperature Range: -65°C to 150°C

Detailed Pin Configuration

The MJE13007G transistor has a standard TO-220 package with three leads: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

  • High Voltage Capability
  • Fast Switching Speed
  • Low Saturation Voltage
  • Good Linearity in Amplification

Advantages and Disadvantages

Advantages

  • Suitable for High Voltage Applications
  • Fast Switching Speed
  • Low Saturation Voltage

Disadvantages

  • Relatively Higher Cost Compared to Low-Voltage Transistors
  • Sensitive to Overcurrent Conditions

Working Principles

The MJE13007G operates based on the principles of bipolar junction transistors (BJTs). When a small current flows into the base terminal, it controls a larger current flow between the collector and emitter terminals. This allows the transistor to act as a switch or an amplifier in electronic circuits.

Detailed Application Field Plans

The MJE13007G is widely used in the following applications: - Power Supply Circuits - Electronic Ballasts - Industrial Motor Drives - Consumer Electronics - Lighting Systems

Detailed and Complete Alternative Models

Some alternative models to the MJE13007G include: - TIP3055 - 2N3055 - MJ15003 - BD139

In conclusion, the MJE13007G power transistor offers high voltage capabilities, fast switching speed, and suitability for various electronic applications. Its use in power supply circuits, electronic ballasts, and other industrial and consumer electronic devices makes it a versatile component in the field of electronics.

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技術ソリューションにおける MJE13007G の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure, here are 10 common questions and answers related to the application of MJE13007G in technical solutions:

  1. Q: What is MJE13007G? A: MJE13007G is a high voltage, high speed NPN power transistor used in various electronic applications.

  2. Q: What are the typical applications of MJE13007G? A: MJE13007G is commonly used in switch mode power supplies, electronic ballasts, and other high voltage switching applications.

  3. Q: What is the maximum collector-emitter voltage for MJE13007G? A: The maximum collector-emitter voltage for MJE13007G is typically around 400V.

  4. Q: What is the maximum collector current for MJE13007G? A: The maximum collector current for MJE13007G is usually around 8A.

  5. Q: How do I properly mount and heat sink MJE13007G? A: MJE13007G should be mounted on a suitable heat sink to ensure proper thermal management and long-term reliability.

  6. Q: What are the key electrical characteristics of MJE13007G? A: Key electrical characteristics include high voltage capability, fast switching speed, and low saturation voltage.

  7. Q: Can MJE13007G be used in audio amplifier circuits? A: While MJE13007G is primarily designed for high voltage switching applications, it can also be used in certain audio amplifier designs.

  8. Q: What are the recommended operating conditions for MJE13007G? A: It is recommended to operate MJE13007G within its specified temperature, voltage, and current limits for optimal performance and reliability.

  9. Q: Are there any common failure modes associated with MJE13007G? A: Common failure modes include thermal runaway, overvoltage stress, and excessive current leading to device breakdown.

  10. Q: Where can I find detailed technical specifications and application notes for MJE13007G? A: Detailed technical specifications and application notes for MJE13007G can be found in the manufacturer's datasheet and application guides.