MGSF2N02ELT1G

Product Overview

Use

It is used as a switching device in various electronic circuits and applications.

Characteristics

Low on-resistance
High current capability
Fast switching speed
Low gate charge

Package

The MGSF2N02ELT1G comes in a small, surface-mount package.

Essence

This MOSFET is essential for controlling power flow in electronic devices and systems.

Packaging/Quantity

It is typically packaged in reels containing a specific quantity based on customer requirements.

Specifications

Drain-Source Voltage (VDS): 20V
Continuous Drain Current (ID): 2A
RDS(ON) (Max) @ VGS = 4.5V: 0.08 Ohm
Gate-Source Voltage (VGS) (Max): ±12V
Total Power Dissipation (PD): 1.25W

Detailed Pin Configuration

The MGSF2N02ELT1G has three pins: 1. Source (S) 2. Gate (G) 3. Drain (D)

Functional Features

Low on-resistance for efficient power management
Fast switching speed for improved performance
High current capability for handling heavy loads
Low gate charge for reduced power loss

Advantages and Disadvantages

Advantages

Efficient power management
Improved performance
Suitable for heavy loads

Disadvantages

May require additional circuitry for certain applications
Sensitivity to static electricity

Working Principles

The MOSFET operates by controlling the flow of current between the drain and source terminals based on the voltage applied to the gate terminal. When a sufficient voltage is applied to the gate, it allows current to flow from the drain to the source, effectively acting as a switch.

Detailed Application Field Plans

The MGSF2N02ELT1G is commonly used in: - Power supply units - Motor control circuits - LED lighting systems - Battery management systems

Detailed and Complete Alternative Models

Some alternative models to MGSF2N02ELT1G include: - IRF3708PBF - FDP8870 - SI2302CDS-T1-GE3

Note: The above information provides a comprehensive overview of the MGSF2N02ELT1G, its specifications, features, and applications.

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