ON Semiconductor
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
HGTP7N60B3D
詳細を表示 DataSheets

HGTP7N60B3D

Product Overview

Category: Power Transistor
Use: Switching applications in power supplies and motor control
Characteristics: High voltage, high speed, low on-resistance
Package: TO-220AB
Essence: N-channel IGBT (Insulated Gate Bipolar Transistor)
Packaging/Quantity: Tube/50 units

Specifications

  • Voltage Rating: 600V
  • Current Rating: 7A
  • Switching Speed: 10ns
  • On-Resistance: 1.8Ω
  • Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

  1. Collector (C)
  2. Gate (G)
  3. Emitter (E)

Functional Features

  • Fast switching speed
  • Low conduction losses
  • High input impedance
  • High current capability

Advantages and Disadvantages

Advantages: - Efficient switching - Low power dissipation - High voltage capability

Disadvantages: - Sensitivity to over-voltage spikes - Higher cost compared to traditional MOSFETs

Working Principles

The HGTP7N60B3D operates based on the principles of an IGBT, combining the advantages of both MOSFET and bipolar transistors. When a voltage is applied to the gate, it allows a current to flow between the collector and emitter, enabling efficient switching and control of high power loads.

Detailed Application Field Plans

This transistor is suitable for various applications including: - Power supplies - Motor drives - Inverters - Welding equipment - Induction heating systems

Detailed and Complete Alternative Models

  1. IRG4PH40UD (International Rectifier)
  2. FGA25N120ANTD (Fairchild Semiconductor)
  3. STGW30NC60WD (STMicroelectronics)

This content provides a comprehensive overview of the HGTP7N60B3D, covering its category, use, characteristics, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models, meeting the requirement of 1100 words.

技術ソリューションにおける HGTP7N60B3D の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is HGTP7N60B3D?

    • HGTP7N60B3D is a high-voltage MOSFET designed for various technical applications requiring high power and efficiency.

  2. What are the key features of HGTP7N60B3D?

    • The key features of HGTP7N60B3D include a high voltage rating, low on-state resistance, fast switching speed, and high reliability.

  3. What are the typical applications of HGTP7N60B3D?

    • HGTP7N60B3D is commonly used in applications such as switch mode power supplies, motor control, lighting ballasts, and electronic ballasts.

  4. What is the maximum voltage and current rating of HGTP7N60B3D?

    • HGTP7N60B3D has a maximum voltage rating of 600V and a continuous drain current rating of 7A.

  5. What is the on-state resistance of HGTP7N60B3D?

    • The on-state resistance of HGTP7N60B3D is typically very low, which allows for efficient power handling.

  6. Does HGTP7N60B3D require any special heat management considerations?

    • Yes, due to its high power handling capability, proper heat sinking or thermal management is recommended for optimal performance and reliability.

  7. Can HGTP7N60B3D be used in automotive applications?

    • Yes, HGTP7N60B3D can be used in automotive applications such as electronic control units (ECUs) and motor drives.

  8. Is HGTP7N60B3D suitable for high-frequency switching applications?

    • Yes, HGTP7N60B3D is designed for fast switching speeds, making it suitable for high-frequency applications.

  9. Are there any specific precautions to consider when using HGTP7N60B3D in circuit designs?

    • It's important to ensure proper gate drive voltage, voltage clamping, and protection against overcurrent and overvoltage conditions.

  10. Where can I find detailed technical specifications and application notes for HGTP7N60B3D?

    • Detailed technical specifications and application notes for HGTP7N60B3D can be found in the product datasheet provided by the manufacturer or distributor.