FDL100N50F

Product Overview

Use

It is used in various electronic circuits and power applications where efficient switching and control of high currents are required.

Characteristics

High current handling capability
Low on-state resistance
Fast switching speed
Low gate drive power requirement

Package

The FDL100N50F is typically available in a TO-264 package.

Essence

The essence of the FDL100N50F lies in its ability to efficiently handle high currents while minimizing power losses.

Packaging/Quantity

It is commonly packaged in reels or tubes, with quantities varying based on manufacturer specifications.

Specifications

Drain-Source Voltage (VDS): 500V
Continuous Drain Current (ID): 100A
On-State Resistance (RDS(on)): 0.08Ω
Gate-Source Voltage (VGS): ±20V
Total Gate Charge (Qg): 160nC
Operating Temperature: -55°C to 150°C

Detailed Pin Configuration

The FDL100N50F typically has three pins: 1. Drain (D) 2. Source (S) 3. Gate (G)

Functional Features

High current handling capacity
Low on-state resistance for reduced power dissipation
Fast switching speed for improved efficiency
Robust construction for reliability in demanding applications

Advantages

Efficient power handling
Reduced power losses
Suitable for high-frequency switching applications
Reliable performance under high currents and temperatures

Disadvantages

Higher cost compared to standard MOSFETs
May require careful consideration of heat dissipation in high-power applications

Working Principles

The FDL100N50F operates based on the principle of field-effect control, where the voltage applied to the gate terminal modulates the conductivity between the drain and source terminals, allowing for efficient control of high currents.

Detailed Application Field Plans

The FDL100N50F finds extensive use in: - Switching power supplies - Motor control systems - Inverters and converters - Automotive electronics - Industrial automation

Detailed and Complete Alternative Models

Some alternative models to the FDL100N50F include: - IRFP4668PbF - STW75N55F3 - IXFN100N50

In conclusion, the FDL100N50F power MOSFET offers high-current handling capabilities, low on-state resistance, and fast switching speeds, making it suitable for a wide range of power applications. Its robust design and functional features make it a preferred choice in industries requiring efficient power control and management.

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技術ソリューションにおける FDL100N50F の適用に関連する 10 件の一般的な質問と回答をリストします。

What is the maximum drain-source voltage of FDL100N50F?
- The maximum drain-source voltage of FDL100N50F is 500V.
What is the continuous drain current rating of FDL100N50F?
- The continuous drain current rating of FDL100N50F is 100A.
What is the on-state resistance (RDS(on)) of FDL100N50F?
- The on-state resistance (RDS(on)) of FDL100N50F is typically 0.08 ohms.
What is the gate threshold voltage of FDL100N50F?
- The gate threshold voltage of FDL100N50F is typically 4V.
Can FDL100N50F be used in high-power applications?
- Yes, FDL100N50F is suitable for high-power applications due to its high drain current and voltage ratings.
What are the typical applications for FDL100N50F?
- FDL100N50F is commonly used in power supplies, motor control, and high-current switching applications.
Does FDL100N50F require a heat sink for operation?
- Depending on the application and power dissipation, a heat sink may be required for optimal thermal performance.
Is FDL100N50F suitable for use in automotive electronics?
- Yes, FDL100N50F can be used in automotive electronics, provided it meets the specific requirements and standards for automotive applications.
What are the recommended operating conditions for FDL100N50F?
- FDL100N50F should be operated within the specified temperature, voltage, and current limits as outlined in the datasheet.
Are there any special considerations for driving the gate of FDL100N50F?
- It is important to ensure proper gate drive voltage and current to achieve optimal performance and reliability with FDL100N50F.