BC857CDW1T1G

Product Overview

Use

It is commonly used in low-power amplification and switching applications.

Characteristics

Low power dissipation
High current gain
Low noise

Package

The BC857CDW1T1G is available in a SOT-323 package.

Essence

This transistor is essential for amplifying weak signals in electronic circuits.

Packaging/Quantity

It is typically sold in reels with a quantity of 3000 units per reel.

Specifications

Collector-Base Voltage (VCBO): 45V
Collector-Emitter Voltage (VCEO): 45V
Emitter-Base Voltage (VEBO): 5V
Continuous Collector Current (IC): 100mA
Total Power Dissipation (PTOT): 250mW
Transition Frequency (fT): 100MHz

Detailed Pin Configuration

The BC857CDW1T1G has three pins: 1. Emitter (E) 2. Base (B) 3. Collector (C)

Functional Features

High current gain
Low saturation voltage
Fast switching speed

Advantages

Small package size
Low power dissipation
Suitable for low-voltage applications

Disadvantages

Limited maximum current handling capability
Relatively low breakdown voltage

Working Principles

The BC857CDW1T1G operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.

Detailed Application Field Plans

This transistor is widely used in audio amplifiers, signal processing circuits, and low-power switching applications. It is also utilized in sensor interfaces and voltage regulators.

Detailed and Complete Alternative Models

Some alternative models to the BC857CDW1T1G include: - BC847CDW1T1G - BC856CDW1T1G - BC848CDW1T1G

In conclusion, the BC857CDW1T1G is a versatile small signal transistor with applications in various electronic circuits, offering high current gain and low power dissipation. Its compact package and functional features make it suitable for low-power amplification and switching applications.

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技術ソリューションにおける BC857CDW1T1G の適用に関連する 10 件の一般的な質問と回答をリストします。

What is the BC857CDW1T1G transistor used for?
- The BC857CDW1T1G is a general-purpose PNP transistor commonly used in amplification and switching applications.
What are the key features of the BC857CDW1T1G transistor?
- The BC857CDW1T1G transistor features high current gain, low saturation voltage, and low noise, making it suitable for various technical solutions.
What are the typical applications of the BC857CDW1T1G transistor?
- Typical applications include audio amplification, signal processing, voltage regulation, and general switching circuits.
What are the electrical characteristics of the BC857CDW1T1G transistor?
- The transistor has a maximum collector current of 100mA, a maximum collector-emitter voltage of 45V, and a DC current gain (hFE) ranging from 110 to 800.
How does the BC857CDW1T1G transistor compare to similar transistors in its class?
- Compared to similar transistors, the BC857CDW1T1G offers lower noise and higher current gain, making it suitable for low-power applications.
What are the recommended operating conditions for the BC857CDW1T1G transistor?
- The transistor is typically operated at temperatures ranging from -55°C to 150°C and with a maximum power dissipation of 250mW.
Can the BC857CDW1T1G be used in high-frequency applications?
- While the BC857CDW1T1G can be used in moderate frequency applications, it may not be suitable for very high-frequency designs due to its transition frequency limitations.
Are there any specific layout considerations when using the BC857CDW1T1G in a circuit?
- It's important to minimize lead lengths and keep the input and output traces short to reduce parasitic capacitance and inductance.
What are the packaging options available for the BC857CDW1T1G transistor?
- The BC857CDW1T1G is available in various surface-mount packages, such as SOT-323, making it suitable for compact designs.
Where can I find detailed information about the BC857CDW1T1G transistor for my technical solution?
- Detailed datasheets and application notes for the BC857CDW1T1G transistor can be found on the manufacturer's website or through authorized distributors.