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1N5818G

1N5818G Diode

Product Overview

The 1N5818G diode is a semiconductor device belonging to the category of Schottky diodes. It is commonly used in electronic circuits for its unique characteristics, including low forward voltage drop and fast switching speed. The diode is typically packaged in a small surface-mount package, making it suitable for various applications in electronic devices.

Basic Information Overview

  • Category: Schottky diode
  • Use: Rectification, voltage clamping, and reverse polarity protection in electronic circuits
  • Characteristics: Low forward voltage drop, fast switching speed
  • Package: Surface-mount package
  • Essence: Semiconductor device for efficient rectification and voltage regulation
  • Packaging/Quantity: Typically available in reels or tubes containing multiple units

Specifications

  • Forward Voltage Drop (VF): 0.45V at 1A
  • Reverse Voltage (VR): 30V
  • Average Rectified Current (IO): 1A
  • Operating Temperature Range: -65°C to +125°C
  • Storage Temperature Range: -65°C to +150°C

Detailed Pin Configuration

The 1N5818G diode typically features two pins, with the cathode identified by a line or other marking on the body of the diode.

Functional Features

  • Efficient rectification of AC to DC due to low forward voltage drop
  • Fast switching speed enables rapid response in electronic circuits
  • Suitable for use in high-frequency applications

Advantages and Disadvantages

Advantages

  • Low forward voltage drop reduces power dissipation
  • Fast switching speed allows for high-frequency operation
  • Small surface-mount package saves space in electronic designs

Disadvantages

  • Limited reverse voltage capability compared to some other diode types
  • Higher cost compared to standard silicon diodes

Working Principles

The 1N5818G diode operates based on the Schottky barrier principle, where the metal-semiconductor junction results in a lower forward voltage drop compared to conventional PN-junction diodes. When a forward bias is applied, the diode conducts current efficiently due to the reduced barrier for electron flow.

Detailed Application Field Plans

The 1N5818G diode finds extensive use in various electronic applications, including: - Power supplies - Voltage clamping circuits - Reverse polarity protection - Switching power converters - High-frequency rectification circuits

Detailed and Complete Alternative Models

  • 1N5817G: Lower forward voltage drop, suitable for low-power applications
  • 1N5819G: Higher reverse voltage rating, suitable for higher voltage applications
  • SS14: Standard Schottky diode with similar characteristics

In conclusion, the 1N5818G diode offers efficient rectification and fast switching speed, making it suitable for a wide range of electronic applications. Its low forward voltage drop and compact package make it an ideal choice for space-constrained designs.

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技術ソリューションにおける 1N5818G の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure, here are 10 common questions and answers related to the application of 1N5818G diode in technical solutions:

  1. What is the maximum repetitive reverse voltage of 1N5818G?

    • The maximum repetitive reverse voltage of 1N5818G is 30V.
  2. What is the forward voltage drop of 1N5818G at a specific current?

    • At a forward current of 1A, the typical forward voltage drop of 1N5818G is around 0.45V.
  3. Can 1N5818G be used for rectification in low voltage applications?

    • Yes, 1N5818G is suitable for rectification in low voltage applications due to its low forward voltage drop.
  4. What is the maximum average forward rectified current for 1N5818G?

    • The maximum average forward rectified current for 1N5818G is 1A.
  5. Is 1N5818G suitable for use in switching power supply circuits?

    • Yes, 1N5818G can be used in switching power supply circuits due to its fast switching characteristics.
  6. Does 1N5818G have a high surge current capability?

    • Yes, 1N5818G has a high surge current capability, making it suitable for applications with transient overcurrent conditions.
  7. What is the typical reverse recovery time of 1N5818G?

    • The typical reverse recovery time of 1N5818G is around 15ns.
  8. Can 1N5818G be used in battery charging circuits?

    • Yes, 1N5818G can be used in battery charging circuits due to its low forward voltage drop and fast recovery time.
  9. Is 1N5818G suitable for use in voltage clamping applications?

    • Yes, 1N5818G is suitable for voltage clamping applications due to its low reverse leakage current and fast response time.
  10. What are the typical operating temperature range and storage temperature range for 1N5818G?

    • The typical operating temperature range for 1N5818G is -65°C to +125°C, and the storage temperature range is -65°C to +150°C.