MRF8P20140WHR3

Introduction

The MRF8P20140WHR3 is a high-power RF transistor designed for use in various applications. This entry provides an overview of the product, including its category, use, characteristics, packaging, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

Basic Information Overview

Category: RF Transistor
Use: Power amplification in RF applications
Characteristics: High power handling, high frequency operation
Package: TO-270-2 (NI-780)
Essence: Power amplification in RF systems
Packaging/Quantity: Available in tape and reel packaging, quantity varies by supplier

Specifications

Frequency Range: 2110 - 2170 MHz
Power Output: 14 W
Voltage: 28 V
Gain: 15 dB
Efficiency: 55%

Detailed Pin Configuration

Collector (C)
Base (B)
Emitter (E)

Functional Features

High power gain
Broadband performance
High efficiency

Advantages

High power output
Wide frequency range
High efficiency

Disadvantages

Sensitive to voltage fluctuations
Heat dissipation requirements

Working Principles

The MRF8P20140WHR3 operates on the principle of amplifying RF signals with high power and efficiency. When biased and driven with appropriate input signals, it delivers amplified output signals within the specified frequency range.

Detailed Application Field Plans

Cellular base stations
Radar systems
Wireless communication systems

Detailed and Complete Alternative Models

MRF8P18265H
MRF8P29300H
MRF8P20160HSR5

In conclusion, the MRF8P20140WHR3 is a high-power RF transistor suitable for various RF applications, offering high power output, efficiency, and broadband performance. It is commonly used in cellular base stations, radar systems, and wireless communication systems. Additionally, alternative models such as the MRF8P18265H, MRF8P29300H, and MRF8P20160HSR5 provide similar functionality and can be considered based on specific application requirements.

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