NXP USA Inc.
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
MRF7S19170HR5
詳細を表示 DataSheets

MRF7S19170HR5

Product Overview

Category

The MRF7S19170HR5 belongs to the category of RF Power Transistors.

Use

It is used for high-power amplification in radio frequency (RF) applications, such as in wireless communication systems and radar systems.

Characteristics

  • High power handling capability
  • Broadband performance
  • High efficiency
  • High linearity

Package

The MRF7S19170HR5 is typically available in a plastic package with flange.

Essence

This transistor is essential for achieving high-power amplification in RF systems, enabling reliable and efficient signal transmission.

Packaging/Quantity

The MRF7S19170HR5 is usually packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 1.93 GHz to 1.99 GHz
  • Output Power: 170 Watts
  • Gain: 15 dB
  • Efficiency: 55%
  • Voltage: 32 V
  • Current: 14 A

Detailed Pin Configuration

The MRF7S19170HR5 has a standard pin configuration with input, output, and bias connections clearly labeled for easy integration into RF circuit designs.

Functional Features

  • High power gain
  • Wide frequency coverage
  • Excellent linearity
  • High efficiency

Advantages

  • Suitable for broadband applications
  • High power handling capability
  • Reliable performance
  • Well-defined pin configuration for easy integration

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The MRF7S19170HR5 operates based on the principles of RF power amplification, where it takes a low-power RF signal as input and amplifies it to a higher power level while maintaining signal integrity.

Detailed Application Field Plans

The MRF7S19170HR5 is ideal for use in: - Base stations for wireless communication systems - Radar systems - RF energy applications - Test and measurement equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF7S19170HR5 include: - MRF7S19210HR5 - MRF7S21110HR5 - MRF7S21150HR5 - MRF7S21170HR5

In conclusion, the MRF7S19170HR5 is a high-performance RF power transistor that offers excellent power handling capabilities, wide frequency coverage, and high efficiency, making it suitable for a range of RF applications.

[Word Count: 324]

技術ソリューションにおける MRF7S19170HR5 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the MRF7S19170HR5?

    • The MRF7S19170HR5 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other high-frequency technical solutions.

  2. What is the maximum power output of the MRF7S19170HR5?

    • The MRF7S19170HR5 can deliver a maximum power output of 170 watts, making it suitable for high-power RF applications.

  3. What frequency range does the MRF7S19170HR5 cover?

    • The MRF7S19170HR5 operates within the frequency range of 1.8 GHz to 2.2 GHz, making it ideal for various wireless communication systems.

  4. What are the key features of the MRF7S19170HR5?

    • Some key features of the MRF7S19170HR5 include high power gain, excellent linearity, and ruggedness, making it well-suited for demanding technical solutions.

  5. What are the typical applications of the MRF7S19170HR5?

    • Typical applications of the MRF7S19170HR5 include cellular base stations, repeaters, and other wireless infrastructure equipment requiring high-power RF amplification.

  6. What are the recommended operating conditions for the MRF7S19170HR5?

    • The MRF7S19170HR5 should be operated within specified voltage, current, and temperature ranges to ensure optimal performance and reliability in technical solutions.

  7. Does the MRF7S19170HR5 require any special cooling or heat dissipation measures?

    • Yes, due to its high-power capabilities, the MRF7S19170HR5 may require efficient thermal management, such as heatsinking or active cooling, to maintain safe operating temperatures.

  8. Are there any specific matching or impedance requirements for integrating the MRF7S19170HR5 into a technical solution?

    • Proper impedance matching and RF circuit design are crucial for maximizing the performance of the MRF7S19170HR5 and should be carefully considered during integration.

  9. What are the potential challenges or considerations when using the MRF7S19170HR5 in technical solutions?

    • Challenges may include managing power dissipation, ensuring stability in high-power amplification circuits, and addressing potential harmonic generation.

  10. Where can I find detailed technical documentation and application notes for the MRF7S19170HR5?

    • Detailed technical documentation, including datasheets and application notes for the MRF7S19170HR5, can be obtained from the manufacturer's website or authorized distributors.