MRF7S19080HSR5
Product Overview
Category: RF Power Transistor
Use: High-frequency amplification in RF applications
Characteristics: High power, high efficiency, and high gain
Package: Ceramic package
Essence: Amplifying RF signals with high power and efficiency
Packaging/Quantity: Individual units
Specifications
- Frequency Range: 1.93 - 2.17 GHz
- Output Power: 80 Watts
- Gain: 14 dB
- Efficiency: 55%
- Package Type: NI-1230H
Detailed Pin Configuration
The MRF7S19080HSR5 features a 3-pin configuration: 1. Pin 1: RF Input 2. Pin 2: Ground 3. Pin 3: RF Output
Functional Features
- High power output for RF amplification
- High efficiency leading to reduced power consumption
- Broad frequency range for versatile applications
Advantages and Disadvantages
Advantages: - High power output - High efficiency - Wide frequency range
Disadvantages: - Sensitive to voltage fluctuations - Higher cost compared to lower power transistors
Working Principles
The MRF7S19080HSR5 operates on the principle of amplifying RF signals by utilizing high-power transistors to boost the input signal to the desired output power level.
Detailed Application Field Plans
This transistor is ideal for use in: - Radar systems - Wireless communication systems - Satellite communication systems - RF heating applications
Detailed and Complete Alternative Models
MRF7S19080HSR3
- Frequency Range: 1.93 - 2.17 GHz
- Output Power: 60 Watts
- Gain: 12 dB
- Efficiency: 50%
- Package Type: NI-1230H
MRF7S19080HSR7
- Frequency Range: 1.93 - 2.17 GHz
- Output Power: 100 Watts
- Gain: 16 dB
- Efficiency: 60%
- Package Type: NI-1230H
In conclusion, the MRF7S19080HSR5 is a high-power RF transistor with excellent efficiency and gain characteristics, making it suitable for various high-frequency amplification applications.
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技術ソリューションにおける MRF7S19080HSR5 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the MRF7S19080HSR5?
- The MRF7S19080HSR5 is a high-power RF transistor designed for use in applications such as base stations, wireless infrastructure, and other high-frequency communication systems.
What is the maximum power output of the MRF7S19080HSR5?
- The MRF7S19080HSR5 can deliver a maximum power output of up to 80 watts.
What frequency range does the MRF7S19080HSR5 cover?
- This transistor covers a frequency range of 1750-1990 MHz, making it suitable for various wireless communication applications.
What are the key features of the MRF7S19080HSR5?
- Some key features include high power gain, excellent linearity, and ruggedness, making it ideal for demanding RF applications.
What are the typical applications for the MRF7S19080HSR5?
- Typical applications include cellular base stations, repeaters, and other wireless infrastructure equipment.
What is the recommended operating voltage for the MRF7S19080HSR5?
- The recommended operating voltage is typically around 28 volts.
Does the MRF7S19080HSR5 require any special heat dissipation measures?
- Yes, due to its high-power capabilities, proper heat sinking and thermal management are essential for optimal performance and reliability.
What are the typical performance specifications of the MRF7S19080HSR5?
- Performance specifications include high power gain, low distortion, and high efficiency, contributing to overall system performance.
Is the MRF7S19080HSR5 suitable for both narrowband and broadband applications?
- Yes, this transistor is designed to be versatile and can be used in both narrowband and broadband applications within its frequency range.
Are there any specific matching or biasing requirements for integrating the MRF7S19080HSR5 into a technical solution?
- Proper impedance matching and biasing are crucial for achieving optimum performance, and manufacturers often provide guidelines for these requirements in their datasheets.