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MRF7S19080HR3
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MRF7S19080HR3

Product Overview

Category:

The MRF7S19080HR3 belongs to the category of high-power RF transistors.

Use:

It is used in high-frequency applications such as radar systems, wireless communication, and industrial heating.

Characteristics:

  • High power handling capability
  • High frequency operation
  • Low distortion
  • High efficiency

Package:

The MRF7S19080HR3 comes in a ceramic package for enhanced thermal performance and reliability.

Essence:

This transistor is essential for amplifying high-frequency signals with high power requirements.

Packaging/Quantity:

The MRF7S19080HR3 is typically packaged individually and is available in various quantities depending on the supplier.

Specifications

  • Frequency Range: 1.8 - 960 MHz
  • Power Output: 80 Watts
  • Voltage: 28 V
  • Gain: 15 dB
  • Efficiency: 60%

Detailed Pin Configuration

The MRF7S19080HR3 has a detailed pin configuration with specific connections for gate, drain, and source terminals. Refer to the datasheet for the exact pinout details.

Functional Features

  • High power amplification
  • Broad frequency range coverage
  • High efficiency operation
  • Reliable and rugged design for harsh environments

Advantages and Disadvantages

Advantages

  • High power handling capability
  • Wide frequency coverage
  • High efficiency
  • Rugged construction for reliability

Disadvantages

  • Higher cost compared to lower power transistors
  • Requires careful thermal management due to high power dissipation

Working Principles

The MRF7S19080HR3 operates based on the principles of RF amplification, utilizing its high-power capabilities to amplify input signals across a wide frequency range.

Detailed Application Field Plans

The MRF7S19080HR3 is ideal for use in the following applications: - Radar systems - Wireless communication infrastructure - Industrial heating equipment

Detailed and Complete Alternative Models

Some alternative models to the MRF7S19080HR3 include: - MRF7S18170H - MRF7S21110HS - MRF7S21150HS

In conclusion, the MRF7S19080HR3 is a high-power RF transistor designed for demanding high-frequency applications, offering high efficiency and reliability. Its broad frequency coverage and robust construction make it suitable for various industrial and communication applications.

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技術ソリューションにおける MRF7S19080HR3 の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure, here are 10 common questions and answers related to the application of MRF7S19080HR3 in technical solutions:

  1. What is the MRF7S19080HR3?

    • The MRF7S19080HR3 is a high-power RF transistor designed for use in applications such as base stations, broadcast transmitters, and industrial, scientific, and medical (ISM) equipment.

  2. What is the maximum power output of the MRF7S19080HR3?

    • The MRF7S19080HR3 can deliver up to 80 watts of continuous wave (CW) power output at 960 MHz.

  3. What are the typical operating frequencies for the MRF7S19080HR3?

    • The MRF7S19080HR3 is typically used in the frequency range of 869-960 MHz.

  4. What are the key features of the MRF7S19080HR3?

    • Some key features of the MRF7S19080HR3 include high power gain, high efficiency, and excellent linearity.

  5. What are the recommended bias conditions for the MRF7S19080HR3?

    • The recommended bias conditions for the MRF7S19080HR3 include a collector current of 300 mA and a base voltage of 6 V.

  6. What are some typical applications for the MRF7S19080HR3?

    • Typical applications for the MRF7S19080HR3 include cellular base station amplifiers, repeaters, and other high-power RF amplifiers.

  7. What thermal management considerations should be taken into account when using the MRF7S19080HR3?

    • Proper heat sinking and thermal management are crucial when using the MRF7S19080HR3 to ensure reliable performance and longevity.

  8. What are the input and output impedance characteristics of the MRF7S19080HR3?

    • The MRF7S19080HR3 has a nominal input impedance of 50 ohms and a nominal output impedance of 50 ohms.

  9. What are the typical gain and efficiency values for the MRF7S19080HR3?

    • The MRF7S19080HR3 typically exhibits a gain of around 15-18 dB and an efficiency of 45-55% at 960 MHz.

  10. Are there any special handling or ESD precautions to be aware of when working with the MRF7S19080HR3?

    • Yes, it is important to follow proper ESD precautions and handling procedures to avoid damaging the sensitive components of the MRF7S19080HR3 during assembly and installation.