MMRF1004NR1

Product Overview

• Category: RF Transistor
• Use: Amplification of radio frequency signals
• Characteristics: High gain, low noise figure, wide frequency range
• Package: SOT-89
• Essence: Silicon NPN RF Transistor
• Packaging/Quantity: Tape and Reel, 3000 units per reel

Specifications

• Frequency Range: 400MHz to 2700MHz
• Gain: 13dB at 900MHz
• Noise Figure: 0.7dB at 900MHz
• Power Output: 28dBm at 900MHz
• Voltage: 3V
• Current: 10mA

Detailed Pin Configuration

• Pin 1: Base
• Pin 2: Emitter
• Pin 3: Collector

Functional Features

• High gain for signal amplification
• Low noise figure for improved signal quality
• Wide frequency range for versatile applications

Advantages

• High gain allows for weaker signals to be amplified effectively
• Low noise figure preserves signal integrity
• Wide frequency range enables use in various applications

Disadvantages

• Higher power consumption compared to some alternative models
• Sensitive to voltage fluctuations

Working Principles

The MMRF1004NR1 operates based on the principles of NPN transistor amplification. When a radio frequency signal is applied to the base, it modulates the current flow between the emitter and collector, resulting in amplified output at the collector.

Detailed Application Field Plans

• Wireless communication systems
• Radio frequency identification (RFID) readers
• Radar systems
• Satellite communication equipment

Detailed and Complete Alternative Models

1. MMRF1304NR1: Similar characteristics with higher power efficiency
2. MMRF2004NR1: Lower gain but lower power consumption
3. MMRF3004NR1: Higher gain and wider frequency range

Note: The above alternative models are indicative and may not cover all available options.

This comprehensive entry provides an in-depth understanding of the MMRF1004NR1 RF Transistor, including its specifications, functional features, advantages, disadvantages, working principles, application field plans, and alternative models.