NXP USA Inc.
画像はイメージの場合もございます。
商品詳細は仕様をご覧ください。
BLF4G22S-100,112
詳細を表示 DataSheets

BLF4G22S-100,112

Product Category: RF Power Transistor

Basic Information Overview: - Category: Electronic Component - Use: Amplification of Radio Frequency Signals - Characteristics: High Power, High Frequency, Low Distortion - Package: SOT539A - Essence: High-performance RF power transistor for use in high-power amplifiers - Packaging/Quantity: Tape and Reel, 800 units per reel

Specifications: - Frequency Range: 2300-2400 MHz - Output Power: 100W - Gain: 22dB - Efficiency: 55% - Voltage: 32V - Current: 14A - Operating Temperature Range: -40°C to +150°C

Detailed Pin Configuration: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain - Pin 4: Not Connected - Pin 5: Not Connected

Functional Features: - High Power Gain - High Efficiency - Broadband Operation - Excellent Thermal Stability

Advantages: - High Power Output - Wide Frequency Range - Low Distortion - Good Thermal Performance

Disadvantages: - High Voltage Requirement - Limited Operating Temperature Range

Working Principles: The BLF4G22S-100,112 operates on the principle of amplifying radio frequency signals by controlling the flow of current between the source and drain terminals through the gate terminal.

Detailed Application Field Plans: - Used in Base Station Amplifiers - Suitable for Radar Systems - Ideal for Industrial Heating Applications

Detailed and Complete Alternative Models: - BLF888A: 150W, 30-500 MHz - BLF578XR: 600W, 470-860 MHz - BLF2425M6L: 25W, 2400-2500 MHz

This comprehensive entry provides a detailed overview of the BLF4G22S-100,112, covering its category, basic information, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.

技術ソリューションにおける BLF4G22S-100,112 の適用に関連する 10 件の一般的な質問と回答をリストします。

  1. What is the maximum operating frequency of BLF4G22S-100,112?

    • The maximum operating frequency of BLF4G22S-100,112 is 2.2 GHz.

  2. What is the typical output power of BLF4G22S-100,112 at 2.2 GHz?

    • The typical output power of BLF4G22S-100,112 at 2.2 GHz is 100W.

  3. What is the recommended supply voltage for BLF4G22S-100,112?

    • The recommended supply voltage for BLF4G22S-100,112 is 32V.

  4. What type of modulation schemes is BLF4G22S-100,112 suitable for?

    • BLF4G22S-100,112 is suitable for various modulation schemes including QPSK, QAM, and OFDM.

  5. What are the typical applications for BLF4G22S-100,112?

    • Typical applications for BLF4G22S-100,112 include base station amplifiers, wireless infrastructure, and RF energy applications.

  6. Does BLF4G22S-100,112 require external matching networks?

    • Yes, BLF4G22S-100,112 requires external matching networks for optimal performance.

  7. What is the typical efficiency of BLF4G22S-100,112 at maximum output power?

    • The typical efficiency of BLF4G22S-100,112 at maximum output power is around 45%.

  8. Is BLF4G22S-100,112 capable of operating in Class AB mode?

    • Yes, BLF4G22S-100,112 is capable of operating in Class AB mode.

  9. What thermal management considerations should be taken into account when using BLF4G22S-100,112?

    • Proper heat sinking and thermal management are crucial for maintaining the performance and reliability of BLF4G22S-100,112.

  10. Are there any specific layout guidelines for integrating BLF4G22S-100,112 into a PCB design?

    • Yes, specific layout guidelines regarding RF trace routing, grounding, and decoupling capacitors should be followed for optimal performance of BLF4G22S-100,112.