The PSMN2R0-30BL,118 belongs to the category of power MOSFETs.
The PSMN2R0-30BL,118 has the following specifications: - Drain-Source Voltage (Vdss): 30V - Continuous Drain Current (Id): 100A - Rds On (Max) @ Id, Vgs: 2.0 mOhm @ 50A, 10V - Gate-Source Voltage (Vgs): ±20V - Power Dissipation (Pd): 200W
The detailed pin configuration of the PSMN2R0-30BL,118 is as follows: - Pin 1: Source - Pin 2: Gate - Pin 3: Drain
The functional features of the PSMN2R0-30BL,118 include: - High efficiency in power management - Low on-resistance for minimal power loss - Fast switching capabilities for improved performance
Advantages: - High efficiency - Low on-resistance - Fast switching - Suitable for various electronic applications
Disadvantages: - May require heat sinking for high-power applications - Sensitivity to static discharge
The PSMN2R0-30BL,118 operates based on the principles of field-effect transistors, utilizing the control of electric fields to manage the flow of power through the device.
The PSMN2R0-30BL,118 is commonly used in the following application fields: - Switching power supplies - Motor control - LED lighting - Battery management systems
Some alternative models to the PSMN2R0-30BL,118 include: - IRF3205 - FDP8878 - STP55NF06L
This comprehensive entry provides an in-depth understanding of the PSMN2R0-30BL,118, covering its category, basic information overview, specifications, pin configuration, functional features, advantages and disadvantages, working principles, application field plans, and alternative models.