PDTA143TU,115

Product Overview

• Category: Transistor
• Use: Amplification and switching applications
• Characteristics: Small signal NPN transistor, high current gain, low voltage drop
• Package: SOT416 (SC-75)
• Essence: High performance in a compact package
• Packaging/Quantity: Tape and reel, 3000 units per reel

Specifications

• Type: NPN
• VCEO: 50V
• IC: 100mA
• hFE: 100-400
• Ptot: 200mW
• fT: 250MHz

Detailed Pin Configuration

• Pin 1 (Emitter): Connected to the emitter region of the transistor
• Pin 2 (Base): Connected to the base region of the transistor
• Pin 3 (Collector): Connected to the collector region of the transistor

Functional Features

• High current gain for amplification
• Low voltage drop for efficient switching
• Compact package for space-constrained designs

Advantages

• Small size enables use in compact electronic devices
• High current gain allows for effective signal amplification
• Low voltage drop facilitates efficient switching operations

Disadvantages

• Limited power dissipation capability
• Relatively low collector current rating

Working Principles

The PDTA143TU,115 operates as a small signal NPN transistor, where the base-emitter junction is forward biased to control the collector current. This allows for amplification and switching of signals within electronic circuits.

Detailed Application Field Plans

• Audio amplification in portable devices
• Signal switching in consumer electronics
• Sensor interfacing in IoT devices

Detailed and Complete Alternative Models

• BC847B,215
• MMBT3904,215
• 2N3904BU

This comprehensive entry provides an in-depth understanding of the PDTA143TU,115, covering its specifications, features, advantages, disadvantages, working principles, application field plans, and alternative models.