JANSR2N2920U

Product Overview

Use

It is commonly used in high-power applications such as power supplies, motor control, and audio amplifiers.

Characteristics

High voltage capability
High current handling capacity
Low on-state resistance
Fast switching speed

Package

The JANSR2N2920U is typically available in a TO-3 metal can package.

Essence

This transistor is essential for controlling high-power circuits and devices.

Packaging/Quantity

It is usually packaged individually and sold as single units.

Specifications

Maximum Voltage: 1000V
Maximum Current: 30A
Power Dissipation: 200W
Operating Temperature Range: -55°C to 150°C

Detailed Pin Configuration

The JANSR2N2920U has a standard three-pin configuration: 1. Collector (C) 2. Base (B) 3. Emitter (E)

Functional Features

High voltage and current handling capabilities
Low saturation voltage
Fast switching times

Advantages

Suitable for high-power applications
Robust construction for reliable performance
Low on-state resistance minimizes power loss

Disadvantages

Large physical size due to TO-3 package
Higher cost compared to smaller transistors with similar specifications

Working Principles

The JANSR2N2920U operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.

Detailed Application Field Plans

Power supply units
Motor control systems
Audio amplifiers
High-power LED drivers

Detailed and Complete Alternative Models

MJE13009
2N3055
MJL4281A

In conclusion, the JANSR2N2920U power transistor is a crucial component in high-power electronic circuits, offering robust performance and reliability in various applications.

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技術ソリューションにおける JANSR2N2920U の適用に関連する 10 件の一般的な質問と回答をリストします。

What is JANSR2N2920U?
- JANSR2N2920U is a high-reliability, radiation-hardened N-channel power MOSFET designed for use in space and other harsh environments.
What are the key features of JANSR2N2920U?
- The key features include a radiation hardness assurance (RHA) rating, low on-resistance, high input impedance, and a rugged silicon gate structure.
In what technical solutions can JANSR2N2920U be used?
- JANSR2N2920U is commonly used in space applications, satellite systems, deep-sea exploration equipment, and any other environment with high levels of radiation or extreme conditions.
What are the benefits of using JANSR2N2920U in space applications?
- The benefits include its radiation-hardened design, which ensures reliable performance in the presence of ionizing radiation, and its ability to withstand wide temperature variations.
How does JANSR2N2920U compare to standard commercial MOSFETs?
- JANSR2N2920U offers higher reliability and resilience to radiation compared to standard commercial MOSFETs, making it suitable for mission-critical applications.
What are the voltage and current ratings of JANSR2N2920U?
- JANSR2N2920U typically has a voltage rating of several hundred volts and a current rating of several amps, depending on the specific model.
Are there any special considerations for integrating JANSR2N2920U into a technical solution?
- Designers should consider the radiation environment, thermal management, and electrical characteristics to ensure proper integration and performance.
Can JANSR2N2920U be used in terrestrial applications?
- While it is primarily designed for space and harsh environments, JANSR2N2920U can also be used in terrestrial applications where radiation tolerance and reliability are critical.
What testing and qualification standards apply to JANSR2N2920U?
- JANSR2N2920U is typically qualified to MIL-PRF-19500/601, MIL-PRF-19500/609, and other relevant military and aerospace standards.
Where can I find more detailed technical information about JANSR2N2920U?
- Detailed technical information, including datasheets and application notes, can be obtained from the manufacturer's website or through authorized distributors.