The APTGTQ200DA65T3G belongs to the category of power transistors and is designed for high-power applications. This transistor offers exceptional characteristics, a robust package, and essential features that make it suitable for a wide range of industrial and commercial uses.
The APTGTQ200DA65T3G features the following specifications: - Maximum Voltage: 650V - Continuous Current: 200A - Power Dissipation: 650W - Operating Temperature: -55°C to 150°C - Mounting Type: Through Hole
The detailed pin configuration of the APTGTQ200DA65T3G is as follows: - Pin 1: Gate - Pin 2: Collector - Pin 3: Emitter
The APTGTQ200DA65T3G operates based on the principles of power amplification and control. When a suitable signal is applied to the gate terminal, the transistor allows a large amount of current to flow from the collector to the emitter, effectively controlling the power flow in the circuit.
The APTGTQ200DA65T3G is ideally suited for the following applications: - Industrial motor drives - Power supplies - Renewable energy systems - Electric vehicle powertrains
For users seeking alternative models, the following options can be considered: - APTGTQ150DA60T3G - APTGTQ300DA70T3G - APTGTQ250DA65T3G
In conclusion, the APTGTQ200DA65T3G power transistor offers high-performance characteristics, robust design, and versatile applications, making it an ideal choice for demanding high-power electronic systems.
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What is APTGTQ200DA65T3G?
What are the key specifications of APTGTQ200DA65T3G?
How does APTGTQ200DA65T3G compare to other RF transistors in its class?
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What cooling requirements does APTGTQ200DA65T3G have?
Does APTGTQ200DA65T3G require any special matching circuits?
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