2N5795 Transistor
Product Overview
Category
The 2N5795 is a bipolar junction NPN transistor.
Use
It is commonly used as a general-purpose amplifier or switch in electronic circuits.
Characteristics
- Low power dissipation
- High current gain
- Medium voltage capability
Package
The 2N5795 is typically available in a TO-39 metal can package.
Packaging/Quantity
It is usually sold in reels or tubes containing multiple units.
Specifications
- Collector-Emitter Voltage (VCEO): 80V
- Collector-Base Voltage (VCBO): 100V
- Emitter-Base Voltage (VEBO): 5V
- Collector Current (IC): 1A
- Power Dissipation (PD): 625mW
- Transition Frequency (ft): 30MHz
- Operating Temperature Range: -65°C to 200°C
Detailed Pin Configuration
The 2N5795 transistor has three pins: 1. Collector (C) 2. Base (B) 3. Emitter (E)
Functional Features
The 2N5795 offers high current gain and low power dissipation, making it suitable for various amplification and switching applications.
Advantages
- High current gain
- Low power dissipation
- Medium voltage capability
Disadvantages
- Limited maximum collector current compared to some other transistors
- Relatively lower transition frequency
Working Principles
The 2N5795 operates based on the principles of bipolar junction transistors, where the flow of current between the collector and emitter is controlled by the base current.
Detailed Application Field Plans
The 2N5795 is commonly used in the following applications: - Audio amplifiers - Signal amplification circuits - Switching circuits
Detailed and Complete Alternative Models
Some alternative models to the 2N5795 include: - 2N4401 - BC547 - 2N2222
In conclusion, the 2N5795 transistor is a versatile component with applications in amplification and switching circuits. Its high current gain and low power dissipation make it a popular choice for various electronic designs.
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技術ソリューションにおける 2N5795 の適用に関連する 10 件の一般的な質問と回答をリストします。
What is the 2N5795 transistor used for?
- The 2N5795 is a high-frequency, high-gain NPN transistor commonly used in RF amplifier and oscillator circuits.
What are the key specifications of the 2N5795 transistor?
- The 2N5795 has a maximum collector current of 50mA, a maximum power dissipation of 300mW, and a transition frequency of 800MHz.
Can the 2N5795 be used in low-noise amplifier applications?
- Yes, the 2N5795's low noise figure and high gain make it suitable for use in low-noise amplifier designs.
What are some typical biasing configurations for the 2N5795?
- Common biasing configurations include fixed bias, emitter bias, and voltage divider bias.
Is the 2N5795 suitable for use in VHF and UHF applications?
- Yes, the 2N5795's high-frequency capabilities make it well-suited for VHF and UHF amplifier and oscillator designs.
What are the recommended operating conditions for the 2N5795?
- The 2N5795 is typically operated at a collector-emitter voltage (Vce) of 15V and a collector current (Ic) of 10-20mA.
Can the 2N5795 be used in push-pull amplifier configurations?
- Yes, the 2N5795 can be used in push-pull amplifier configurations to achieve higher output power and improved linearity.
Are there any common alternative transistors to the 2N5795?
- Some common alternatives to the 2N5795 include the 2N5179 and the MRF947T.
What are the typical thermal considerations when using the 2N5795?
- Proper heat sinking is important to ensure that the 2N5795 operates within its specified temperature range and remains reliable.
Where can I find detailed application notes and reference designs for the 2N5795?
- Detailed application notes and reference designs for the 2N5795 can often be found in semiconductor manufacturer datasheets, application guides, and technical literature.