TE28F256J3D95B TR

Product Overview

Category

TE28F256J3D95B TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as computers, smartphones, tablets, and digital cameras.

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High storage capacity: Offers a large amount of storage space for data.
• Fast read and write speeds: Allows for quick access to stored information.
• Durable and reliable: Resistant to physical damage and can withstand frequent use.
• Low power consumption: Consumes minimal power during operation.

Package

TE28F256J3D95B TR is available in a compact package that ensures easy integration into electronic devices. The specific package type may vary depending on the manufacturer.

Essence

The essence of TE28F256J3D95B TR lies in its ability to provide reliable and high-capacity data storage in a compact form factor.

Packaging/Quantity

TE28F256J3D95B TR is typically sold in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the supplier.

Specifications

• Storage Capacity: 256 Megabits (32 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 20 years
• Erase/Program Cycles: 100,000 cycles

Detailed Pin Configuration

The pin configuration of TE28F256J3D95B TR is as follows:

1. VCC (Power Supply)
2. A0-A18 (Address Inputs)
3. DQ0-DQ15 (Data Inputs/Outputs)
4. WE# (Write Enable)
5. CE# (Chip Enable)
6. OE# (Output Enable)
7. RP#/BYTE# (Ready/Busy or Byte Enable)
8. RESET# (Reset)
9. WP#/ACC (Write Protect/Acceleration)
10. VSS (Ground)

Functional Features

• High-speed read and write operations
• Sector erase capability for efficient data management
• Built-in error correction codes (ECC) for data integrity
• Lockdown feature to protect critical data from accidental modification
• Software and hardware protection mechanisms to prevent unauthorized access
• Support for various programming algorithms and protocols

Advantages and Disadvantages

Advantages

• Large storage capacity allows for storing a vast amount of data.
• Fast read and write speeds enable quick access to stored information.
• Durable and reliable, ensuring data integrity even in harsh environments.
• Low power consumption helps prolong battery life in portable devices.

Disadvantages

• Limited number of erase/program cycles may affect the lifespan of the flash memory.
• Relatively higher cost compared to other types of memory.
• Susceptible to data loss in case of sudden power failure during write operations.

Working Principles

TE28F256J3D95B TR utilizes a technology called NAND flash memory. It stores data by trapping electric charges in floating gate transistors. When reading data, the charge level is measured to determine the stored information. During writing, the charge is adjusted to represent the desired data. Erasing is performed at the sector level by removing all charges within a specific block.

Detailed Application Field Plans

TE28F256J3D95B TR finds applications in various electronic devices, including but not limited to: - Solid-state drives (SSDs) - USB flash drives - Memory cards - Embedded systems - Industrial control systems

Detailed and Complete Alternative Models

1. TE28F256J3D95B TR is an alternative model to TE28F256J3D95A TR, offering similar specifications and features.
2. TE28F256J3D95B TR can be replaced by AT45DB321E-SHN-T, which provides comparable storage capacity and performance.

Note: This list is not exhaustive, and there may be other alternative models available in the market.

In conclusion, TE28F256J3D95B TR is a flash memory chip that offers high-capacity data storage, fast read/write speeds, and durability. It finds applications in various electronic devices and is a reliable choice for data storage needs.