PC28F256G18FF TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Surface Mount Technology (SMT)
• Essence: Stores data using electrically erasable programmable read-only memory (EEPROM) technology
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Capacity: 256 gigabits (32 gigabytes)
• Organization: 8 bits per cell (SLC)
• Interface: Parallel NOR Flash
• Voltage Range: 2.7V to 3.6V
• Operating Temperature: -40°C to +85°C
• Speed: Fast access and program/erase times

Detailed Pin Configuration

The PC28F256G18FF TR has a pin configuration as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A23: Address inputs
4. DQ0-DQ7: Data inputs/outputs
5. WE#: Write enable control
6. CE#: Chip enable control
7. OE#: Output enable control
8. RP#/BYTE#: Ready/Busy or Byte Enable control
9. RY/BY#: Ready/Busy output
10. WP#/ACC: Write protect or Acceleration control
11. RESET#: Reset input
12. VPP: High voltage programming supply
13. NC: No connection
14. VSS: Ground reference

Functional Features

• High-density storage capacity
• Fast read and write operations
• Reliable data retention
• Low power consumption
• Wide operating temperature range
• Support for various interface protocols
• Built-in error correction mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - High-speed data access - Non-volatile memory - Low power consumption

Disadvantages: - Relatively higher cost compared to other memory technologies - Limited endurance (limited number of program/erase cycles)

Working Principles

The PC28F256G18FF TR utilizes EEPROM technology, which allows for electrically erasing and reprogramming data. It stores information in a grid of memory cells, with each cell capable of storing multiple bits. The memory cells are organized into pages and blocks, allowing for efficient read and write operations. When data is written, the memory cells are programmed by applying specific voltage levels to the appropriate pins. Reading data involves sensing the voltage levels stored in the memory cells.

Detailed Application Field Plans

The PC28F256G18FF TR is widely used in various electronic devices and applications, including: - Solid-state drives (SSDs) - Embedded systems - Automotive electronics - Industrial control systems - Networking equipment - Consumer electronics

Detailed and Complete Alternative Models

1. PC28F128G18FF TR: 128 gigabit (16 gigabyte) capacity, similar specifications
2. PC28F512G18FF TR: 512 gigabit (64 gigabyte) capacity, similar specifications
3. PC28F1T8U5B TR: 1 terabit (128 gigabyte) capacity, similar specifications

These alternative models offer different storage capacities while maintaining similar characteristics and functionality.

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