MT48H4M16LFB4-75:H TR

Product Overview

Category

MT48H4M16LFB4-75:H TR belongs to the category of semiconductor memory products.

Use

It is primarily used as a high-density synchronous dynamic random-access memory (SDRAM) module.

Characteristics

• High density: The MT48H4M16LFB4-75:H TR offers a large storage capacity, allowing for efficient data storage and retrieval.
• Synchronous operation: It operates synchronously with the system clock, enabling faster data transfer rates.
• Low power consumption: This product is designed to consume minimal power, making it suitable for energy-efficient applications.
• High-speed performance: With a maximum operating frequency of 75 MHz, it provides fast data access and transfer speeds.
• Reliable performance: The MT48H4M16LFB4-75:H TR ensures stable and reliable operation, minimizing data errors.

Package and Quantity

The MT48H4M16LFB4-75:H TR is available in a compact and standardized package. The exact packaging and quantity may vary depending on the manufacturer and supplier.

Essence

The essence of MT48H4M16LFB4-75:H TR lies in its ability to provide high-density and high-speed memory storage, facilitating efficient data processing in various electronic devices.

Specifications

• Memory Type: Synchronous Dynamic Random-Access Memory (SDRAM)
• Organization: 4 Meg x 16
• Operating Voltage: 3.3V
• Operating Frequency: Up to 75 MHz
• Data Rate: 150 MHz
• Interface: Parallel
• Package Type: FBGA (Fine-Pitch Ball Grid Array)
• Pin Count: 54 pins
• Temperature Range: -40°C to +85°C

Detailed Pin Configuration

The MT48H4M16LFB4-75:H TR has a total of 54 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. DQ8
11. DQ9
12. DQ10
13. DQ11
14. DQ12
15. DQ13
16. DQ14
17. DQ15
18. A0
19. A1
20. A2
21. A3
22. A4
23. A5
24. A6
25. A7
26. A8
27. A9
28. A10
29. A11
30. A12
31. A13
32. A14
33. A15
34. /CAS
35. /RAS
36. /WE
37. /CS0
38. /CS1
39. /CS2
40. /CS3
41. /BA0
42. /BA1
43. CLK
44. CKE
45. /CKE
46. /CK
47. /CK
48. VSS
49. VSS
50. VSS
51. VSS
52. VSS
53. VSS
54. VSS

Functional Features

• Burst Mode: The MT48H4M16LFB4-75:H TR supports burst mode operation, allowing for efficient sequential data access.
• Auto Precharge: It automatically precharges the memory cells after a read or write operation, optimizing performance.
• Self-Refresh: This feature enables the memory module to refresh itself without external intervention, ensuring data integrity.
• On-Die Termination (ODT): The ODT feature helps in reducing signal reflections and improving signal quality.

Advantages and Disadvantages

Advantages

• High-density storage capacity
• Fast data access and transfer speeds
• Low power consumption
• Reliable performance
• Compact package size

Disadvantages

• Limited compatibility with certain systems or devices
• Higher cost compared to lower-capacity memory modules

Working Principles

The MT48H4M16LFB4-75:H TR operates based on the principles of synchronous dynamic random-access memory. It synchronizes its operations with the system clock, allowing for efficient data transfer between the memory module and the processor. The memory cells store data in a digital format using electrical charges, which can be accessed and manipulated as per the system requirements.

Detailed Application Field Plans

The MT48H4M16LFB4-75:H TR finds applications in various electronic devices and systems, including but not limited to: - Personal computers - Servers - Networking equipment - Embedded systems - Consumer electronics