MT47H64M8CB-5E:B TR

Product Overview

Category

MT47H64M8CB-5E:B TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports high-speed data transfer rates
• Compact size for easy integration into various electronic devices

Package

MT47H64M8CB-5E:B TR is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide fast and reliable data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT47H64M8CB-5E:B TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabit x 8
• Operating Voltage: 1.8V
• Speed Grade: -5E:B
• Package Type: Small form factor package
• Temperature Range: Industrial (-40°C to +85°C)

Detailed Pin Configuration

The detailed pin configuration of MT47H64M8CB-5E:B TR is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CKE
44. CS#
45. DM0
46. DM1
47. VSS
48. DQS0#
49. DQS0
50. VSS
51. DQS1#
52. DQS1
53. VSS
54. DQS2#
55. DQS2
56. VSS
57. DQS3#
58. DQS3
59. VSS
60. DQSN0
61. DQSN1
62. VSS
63. DQSN2
64. DQSN3

Functional Features

• High-speed data transfer with low latency
• Support for burst mode operations
• On-die termination (ODT) for improved signal integrity
• Auto-refresh and self-refresh modes for power-saving
• Error correction code (ECC) support for data integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval speeds
• Large storage capacity
• Compact size for easy integration into electronic devices
• Support for high-speed data transfer rates
• Power-saving features

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other types of memory

Working Principles

MT47H64M8CB-5E:B TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the memory controller activates the appropriate row and column addresses to access the desired data.

Detailed Application Field Plans

MT47H64M8CB-5E:B TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles - Networking equipment

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT47H64M8CB-5E:B TR include: - MT47H64M16HR-25E:A - MT47H64M32HR-3:G - MT47H64