Micron Technology Inc.
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MT47H256M4HQ-3:E TR
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MT47H256M4HQ-3:E TR

Product Overview

Category

MT47H256M4HQ-3:E TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

  • High-speed data access
  • Large storage capacity
  • Low power consumption
  • Reliable performance

Package

MT47H256M4HQ-3:E TR is available in a compact and durable package that ensures protection during transportation and handling.

Essence

The essence of this product lies in its ability to store and retrieve digital information quickly and efficiently.

Packaging/Quantity

MT47H256M4HQ-3:E TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips.

Specifications

  • Model: MT47H256M4HQ-3:E TR
  • Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
  • Capacity: 256 Megabits (32 Megabytes)
  • Speed: 3 nanoseconds (ns)
  • Voltage: 1.8 volts (V)
  • Organization: 4 banks x 4,194,304 rows x 256 columns
  • Interface: Double Data Rate (DDR) SDRAM

Detailed Pin Configuration

The pin configuration of MT47H256M4HQ-3:E TR is as follows:

  1. VDD
  2. DQ0
  3. DQ1
  4. DQ2
  5. DQ3
  6. DQ4
  7. DQ5
  8. DQ6
  9. DQ7
  10. DQ8
  11. DQ9
  12. DQ10
  13. DQ11
  14. DQ12
  15. DQ13
  16. DQ14
  17. DQ15
  18. VSS
  19. VDD
  20. NC
  21. A0
  22. A1
  23. A2
  24. A3
  25. A4
  26. A5
  27. A6
  28. A7
  29. A8
  30. A9
  31. A10
  32. A11
  33. A12
  34. A13
  35. A14
  36. A15
  37. A16
  38. A17
  39. A18
  40. A19
  41. BA0
  42. BA1
  43. RAS#
  44. CAS#
  45. WE#
  46. CK
  47. CKE
  48. CS#
  49. DM0
  50. DM1
  51. VSS

Functional Features

  • High-speed data transfer rate
  • Burst mode operation for efficient data access
  • Auto-refresh and self-refresh modes for power-saving
  • On-die termination (ODT) for improved signal integrity
  • Programmable read and write latency settings

Advantages and Disadvantages

Advantages

  • Fast data access speed enhances overall system performance.
  • Large storage capacity allows for the handling of extensive data.
  • Low power consumption contributes to energy efficiency.
  • Reliable performance ensures data integrity.

Disadvantages

  • Relatively higher cost compared to other memory technologies.
  • Limited scalability in terms of capacity expansion.

Working Principles

MT47H256M4HQ-3:E TR operates based on the principles of synchronous dynamic random access memory (SDRAM). It utilizes a clock signal to synchronize data transfers between the memory module and the host device. The memory cells store data as charge in capacitors, which are periodically refreshed to maintain data integrity.

Detailed Application Field Plans

MT47H256M4HQ-3:E TR finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops and notebooks - Servers - Mobile phones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT47H256M4HQ-3:E TR include: - MT47H128M8HQ-3:E TR - MT47H512M16HR-25E IT:H - MT47H64M16HR-25E:H

These models differ in terms of capacity, speed, and organization, providing options for different system requirements.

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技術ソリューションにおける MT47H256M4HQ-3:E TR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of MT47H256M4HQ-3:E TR in technical solutions:

  1. Question: What is the capacity of the MT47H256M4HQ-3:E TR memory module?
    Answer: The MT47H256M4HQ-3:E TR has a capacity of 256 megabits (32 megabytes).

  2. Question: What is the operating voltage range for this memory module?
    Answer: The operating voltage range for the MT47H256M4HQ-3:E TR is 2.7V to 3.6V.

  3. Question: What is the maximum clock frequency supported by this memory module?
    Answer: The MT47H256M4HQ-3:E TR supports a maximum clock frequency of 166 MHz.

  4. Question: Is this memory module compatible with DDR3 technology?
    Answer: Yes, the MT47H256M4HQ-3:E TR is a DDR3 SDRAM memory module.

  5. Question: Can this memory module be used in industrial applications?
    Answer: Yes, the MT47H256M4HQ-3:E TR is designed for industrial temperature range (-40°C to +85°C) applications.

  6. Question: Does this memory module support ECC (Error Correction Code)?
    Answer: No, the MT47H256M4HQ-3:E TR does not support ECC.

  7. Question: What is the data transfer rate of this memory module?
    Answer: The MT47H256M4HQ-3:E TR has a data transfer rate of up to 1333 Mbps.

  8. Question: Can this memory module be used in automotive applications?
    Answer: Yes, the MT47H256M4HQ-3:E TR is AEC-Q100 qualified, making it suitable for automotive applications.

  9. Question: What is the package type of this memory module?
    Answer: The MT47H256M4HQ-3:E TR comes in a 78-ball FBGA (Fine-pitch Ball Grid Array) package.

  10. Question: Is this memory module RoHS compliant?
    Answer: Yes, the MT47H256M4HQ-3:E TR is RoHS (Restriction of Hazardous Substances) compliant, ensuring it meets environmental standards.

Please note that these answers are based on general information about the MT47H256M4HQ-3:E TR memory module and may vary depending on specific technical requirements and application scenarios.