MT47H256M4CF-25E:H TR

Product Overview

Category

MT47H256M4CF-25E:H TR belongs to the category of semiconductor memory products.

Use

This product is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed performance: The MT47H256M4CF-25E:H TR offers fast data access and transfer rates, enabling efficient processing of large amounts of information.
• Large storage capacity: With a capacity of 256 megabits (32 megabytes), this memory chip can store a significant amount of data.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Reliable operation: It features robust error correction capabilities, ensuring data integrity and reliability.

Package

The MT47H256M4CF-25E:H TR is available in a compact and standardized package, which facilitates easy integration into various electronic devices.

Essence

The essence of this product lies in its ability to provide high-speed and reliable data storage, contributing to the overall performance and functionality of electronic devices.

Packaging/Quantity

The MT47H256M4CF-25E:H TR is typically packaged in trays or reels, with each package containing a specific quantity of memory chips. The exact quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Synchronous Dynamic Random Access Memory (SDRAM)
• Organization: 256 Megabits x 4
• Operating Voltage: 2.5V
• Speed Grade: -25E:H
• Package Type: Thin Small Outline Package (TSOP)
• Pin Count: 66 pins

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. A16
37. A17
38. A18
39. A19
40. A20
41. A21
42. A22
43. A23
44. A24
45. A25
46. A26
47. A27
48. A28
49. A29
50. A30
51. A31
52. BA0
53. BA1
54. RAS#
55. CAS#
56. WE#
57. CKE
58. CS#
59. DM0
60. DM1
61. VREF
62. VDD
63. VDD
64. VSS
65. VSS
66. NC

Functional Features

• Burst Mode: The MT47H256M4CF-25E:H TR supports burst mode operation, allowing for efficient consecutive data transfers.
• Auto Refresh: It features an auto-refresh function that ensures the memory cells are periodically refreshed, maintaining data integrity.
• Precharge Power-Down: This product supports precharge power-down mode, reducing power consumption when the memory is not in use.
• On-Die Termination (ODT): ODT helps to improve signal integrity by matching impedance and reducing reflections on the data bus.

Advantages and Disadvantages

Advantages

• High-speed performance enables faster data processing.
• Large storage capacity accommodates extensive data requirements.
• Low power consumption prolongs battery life in portable devices.
• Robust error correction ensures reliable data storage.

Disadvantages

• Limited compatibility with certain older device architectures.
• Relatively higher cost compared to other memory technologies.

Working Principles

The MT47H256M4CF-25E:H TR operates based on synchronous dynamic random access memory (SDRAM) technology. It stores data in a matrix of capacitors, which are periodically refreshed to maintain the stored information. The memory cells are accessed using row and column addresses, allowing for efficient read and write operations.

Detailed Application Field Plans

The MT47H256M4CF-25E:H TR finds applications in various electronic devices, including: 1. Personal computers and laptops 2.