MT46V8M16P-5B:D TR

Product Overview

Category

The MT46V8M16P-5B:D TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compact size for easy integration into various electronic devices

Package

The MT46V8M16P-5B:D TR is available in a small form factor package, making it suitable for space-constrained applications.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval functions in electronic devices.

Packaging/Quantity

The MT46V8M16P-5B:D TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 8 Meg x 16
• Operating Voltage: 3.3V
• Speed Grade: -5B:D
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48
• Refresh Mode: Auto-refresh and self-refresh
• Operating Temperature Range: -40°C to +85°C

Detailed Pin Configuration

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. /CAS
39. /RAS
40. /WE
41. /CS
42. BA0
43. BA1
44. VDD
45. /CKE
46. /CK
47. VSS
48. VDDQ

Functional Features

• High-speed data access: The MT46V8M16P-5B:D TR offers fast read and write operations, enabling quick data access in electronic devices.
• Large storage capacity: With an organization of 8 Meg x 16, this DRAM chip provides a substantial amount of memory for storing data.
• Auto-refresh and self-refresh modes: The chip supports both auto-refresh and self-refresh modes to ensure data integrity and stability.
• Low power consumption: The MT46V8M16P-5B:D TR is designed to consume minimal power, making it energy-efficient.

Advantages and Disadvantages

Advantages

• High-speed data access enables efficient performance in electronic devices.
• Large storage capacity allows for the storage of significant amounts of data.
• Compact size facilitates easy integration into various electronic devices.
• Supports auto-refresh and self-refresh modes for data integrity and stability.
• Low power consumption contributes to energy efficiency.

Disadvantages

• Volatile memory requires a constant power supply, leading to data loss in the event of power failure.
• Limited operating temperature range (-40°C to +85°C) may restrict usage in extreme environments.

Working Principles

The MT46V8M16P-5B:D TR operates based on the principles of dynamic random access memory. It stores data as electrical charges in tiny capacitors within the chip. To read or write data, the chip activates specific rows and columns by applying appropriate voltage levels to the corresponding pins. The stored charge is then sensed and amplified to retrieve or modify the data.

Detailed Application Field Plans

The MT46V8M16P-5B:D TR finds extensive application in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Its high-speed data access, large storage capacity, and compact size make it suitable for these applications, where quick and reliable data storage and retrieval are crucial.

Detailed and Complete Alternative Models

1. MT46