MT46V64M8FN-6:D TR

Product Overview

Category

The MT46V64M8FN-6:D TR belongs to the category of dynamic random access memory (DRAM) chips.

Use

This product is primarily used in electronic devices such as computers, smartphones, and tablets for storing and accessing data quickly.

Characteristics

• High-speed data storage and retrieval capabilities
• Volatile memory that requires constant power supply
• Offers large storage capacity
• Supports fast read and write operations
• Compatible with various electronic devices

Package

The MT46V64M8FN-6:D TR is typically packaged in a small form factor integrated circuit (IC) package.

Essence

The essence of this product lies in its ability to provide high-speed and efficient data storage and retrieval functions for electronic devices.

Packaging/Quantity

The MT46V64M8FN-6:D TR is commonly available in reels or trays, with varying quantities depending on the manufacturer's specifications.

Specifications

• Part Number: MT46V64M8FN-6:D TR
• Memory Type: Dynamic Random Access Memory (DRAM)
• Organization: 64 Megabit x 8
• Operating Voltage: 3.3V
• Speed Grade: 6
• Package Type: Small Outline Integrated Circuit (SOIC)
• Pin Count: 48
• Temperature Range: Commercial (0°C to +70°C)
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V64M8FN-6:D TR has a total of 48 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. WE#
12. CAS#
13. RAS#
14. A0
15. A1
16. A2
17. A3
18. A4
19. A5
20. A6
21. A7
22. A8
23. A9
24. A10
25. A11
26. A12
27. A13
28. A14
29. A15
30. BA0#
31. BA1#
32. CLK
33. CKE
34. CS#
35. DM0
36. DM1
37. VREF
38. NC
39. NC
40. VDDQ
41. VSSQ
42. NC
43. NC
44. NC
45. NC
46. NC
47. NC
48. VSS

Functional Features

• High-speed data access and transfer
• Low power consumption
• Easy integration with various electronic devices
• Supports burst mode operations
• Auto-refresh capability for maintaining data integrity

Advantages and Disadvantages

Advantages

• Fast data access and retrieval
• Large storage capacity
• Compatibility with a wide range of electronic devices
• Low power consumption

Disadvantages

• Volatile memory requires constant power supply
• Relatively higher cost compared to other memory technologies
• Susceptible to data loss in case of power failure

Working Principles

The MT46V64M8FN-6:D TR operates based on the principles of dynamic random access memory. It stores data in capacitors within each memory cell, which need to be periodically refreshed to maintain data integrity. The memory cells are organized in a matrix structure, allowing for efficient read and write operations.

Detailed Application Field Plans

The MT46V64M8FN-6:D TR is widely used in various electronic devices, including but not limited to: - Personal computers - Laptops - Servers - Smartphones - Tablets - Gaming consoles

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to the MT46V64M8FN-6:D TR include: - MT47H64M16HR-25E:G - K4B2G1646F-BCK0 - IS42S16320D-7TLI

These alternative models offer similar functionality and characteristics, providing options for different design requirements.

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