MT46V16M16TG-6T:F TR

Product Overview

Category

MT46V16M16TG-6T:F TR belongs to the category of dynamic random access memory (DRAM) products.

Use

This product is primarily used in computer systems, mobile devices, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-density storage capacity
• Fast data access and transfer rates
• Low power consumption
• Reliable performance
• Compatibility with various platforms and architectures

Package

MT46V16M16TG-6T:F TR is available in a small outline dual in-line memory module (SODIMM) package.

Essence

The essence of this product lies in its ability to provide efficient and reliable data storage and retrieval capabilities for electronic devices.

Packaging/Quantity

MT46V16M16TG-6T:F TR is typically packaged in trays or reels, with each unit containing a single memory module.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1 Gigabit (16 Megabytes)
• Organization: 16 Meg x 16
• Speed: 667 MHz
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The MT46V16M16TG-6T:F TR memory module has a total of 60 pins. The pin configuration is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. A8
29. A9
30. A10
31. A11
32. A12
33. A13
34. A14
35. A15
36. BA0
37. BA1
38. RAS#
39. CAS#
40. WE#
41. CK
42. CKE
43. CS#
44. DM0
45. DM1
46. VSS
47. VDD
48. VREF
49. ODT
50. VSS
51. DQS0
52. DQS#0
53. DQS1
54. DQS#1
55. VSS
56. VDD
57. VSS
58. VDD
59. VSS
60. VDD

Functional Features

• High-speed data access and transfer capabilities
• Support for burst mode operations
• Auto-refresh and self-refresh modes for power-saving
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support for data reliability

Advantages and Disadvantages

Advantages

• High-density storage capacity allows for more data to be stored in a smaller physical space.
• Fast data access and transfer rates enable quick processing and retrieval of information.
• Low power consumption helps to extend the battery life of mobile devices.
• Reliable performance ensures data integrity and system stability.
• Compatibility with various platforms and architectures provides flexibility in system design.

Disadvantages

• Limited storage capacity compared to other memory technologies like NAND flash.
• Relatively higher cost per unit of storage compared to other memory options.
• Vulnerable to data loss in case of power failure or system crashes.

Working Principles

MT46V16M16TG-6T:F TR operates based on the principles of dynamic random access memory (DRAM). It stores data in capacitors within each memory cell, which are periodically refreshed to maintain the stored information. When a read or write operation is performed, the data is accessed by activating the appropriate row and column addresses.

Detailed Application Field Plans

MT46V16M16TG-6T:F TR can be used in various applications, including: - Personal computers - Laptops and notebooks - Servers - Mobile devices (smartphones, tablets) - Networking equipment - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to MT46V16M16TG-6T:F TR include: - MT46V32M16TG-6T:F TR (2 Gigabit capacity) - MT46H64M16LF