MT45W4MW16BBB-706 L WT TR

Basic Information Overview

• Category: Memory chip
• Use: Storage of digital data in electronic devices
• Characteristics: Non-volatile, high-speed, low power consumption
• Package: Surface mount technology (SMT)
• Essence: Provides reliable and efficient data storage solution
• Packaging/Quantity: Available in tape and reel packaging, quantity varies based on customer requirements

Specifications

• Memory Type: NAND Flash
• Capacity: 4 gigabits (512 megabytes)
• Organization: 4 banks x 2,048 pages x 256 bytes
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT45W4MW16BBB-706 L WT TR memory chip has a total of 48 pins. The pin configuration is as follows:

1. VCCQ - Power supply for I/O buffers
2. DQ0-DQ15 - Data input/output pins
3. WE# - Write Enable
4. A0-A11 - Address inputs
5. CLE - Command Latch Enable
6. ALE - Address Latch Enable
7. RE# - Read Enable
8. CE# - Chip Enable
9. R/B# - Ready/Busy
10. WP# - Write Protect
11. GND - Ground

Functional Features

• High-speed data transfer rate
• Low power consumption
• Reliable and durable data storage
• Support for various operating systems and interfaces
• Built-in error correction codes (ECC) for data integrity

Advantages and Disadvantages

Advantages: - Fast read and write operations - Non-volatile memory retains data even when power is disconnected - Low power consumption extends battery life in portable devices - Compact package size allows for space-efficient designs

Disadvantages: - Limited capacity compared to other storage technologies - Relatively higher cost per unit of storage compared to traditional hard drives

Working Principles

The MT45W4MW16BBB-706 L WT TR memory chip utilizes NAND flash technology to store digital data. It consists of multiple memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. When data is written, the memory controller sends commands and addresses to the chip, which then stores the data in the appropriate memory cells. During read operations, the stored data is retrieved by accessing the specific memory cells based on the provided address.

Detailed Application Field Plans

The MT45W4MW16BBB-706 L WT TR memory chip finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Solid-state drives (SSDs) 3. Digital cameras 4. Portable gaming consoles 5. Industrial control systems 6. Automotive electronics

Detailed and Complete Alternative Models

1. MT29F4G08ABADAWP - 4 gigabit NAND flash memory chip from Micron Technology
2. S34ML04G200TFI000 - 4 gigabit NAND flash memory chip from Cypress Semiconductor
3. K9F4G08U0D - 4 gigabit NAND flash memory chip from Samsung Electronics
4. IS43TR16256A - 4 gigabit DDR3L SDRAM chip from Integrated Silicon Solution Inc.
5. W25Q32JVZPIQ - 4 megabyte serial flash memory chip from Winbond Electronics Corporation

Note: The above alternative models are provided for reference and may have different specifications and pin configurations. It is recommended to consult the respective datasheets for detailed information.

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