MT45W1MW16BAFB-856 WT

Product Overview

Category

MT45W1MW16BAFB-856 WT belongs to the category of semiconductor memory devices.

Use

It is primarily used for data storage and retrieval in electronic devices such as computers, smartphones, and tablets.

Characteristics

• High-speed data transfer
• Non-volatile memory
• Low power consumption
• Compact size

Package

The MT45W1MW16BAFB-856 WT comes in a small form factor package, making it suitable for integration into various electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

The MT45W1MW16BAFB-856 WT is typically packaged in trays or reels, with each package containing a specific quantity of memory devices.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 gigabit (128 megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200 megabytes per second

Detailed Pin Configuration

The MT45W1MW16BAFB-856 WT has a total of 48 pins, which are assigned specific functions for proper operation. The pin configuration is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output lines
5. WE# - Write enable
6. CE# - Chip enable
7. RE# - Read enable
8. CLE - Command latch enable
9. ALE - Address latch enable
10. R/B# - Ready/busy status

(Note: The above list is not exhaustive and only includes some of the important pins.)

Functional Features

• High-speed read and write operations
• Block erase and program operations
• Error correction code (ECC) for data integrity
• Wear-leveling algorithm for extended lifespan
• Bad block management

Advantages

• Fast data transfer rate enhances overall system performance.
• Non-volatile memory ensures data retention even during power loss.
• Low power consumption prolongs battery life in portable devices.
• Compact size allows for integration into space-constrained designs.

Disadvantages

• Limited capacity compared to higher-density memory devices.
• Higher cost per unit compared to some other memory technologies.
• Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

The MT45W1MW16BAFB-856 WT utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed and erased. When reading data, the stored charge is detected and converted back into digital information.

Detailed Application Field Plans

The MT45W1MW16BAFB-856 WT finds applications in various electronic devices, including but not limited to: - Personal computers - Laptops - Smartphones - Tablets - Digital cameras - Gaming consoles

Its high-speed data transfer, reliability, and compact size make it suitable for use in these devices, enabling efficient storage and retrieval of user data.

Detailed and Complete Alternative Models

• MT29F1G08ABADAWP
• S34ML01G200TFI000
• IS43TR16256AL-125KBLI

(Note: The above list is not exhaustive and only includes a few alternative models. There are several other options available in the market.)

In conclusion, the MT45W1MW16BAFB-856 WT is a semiconductor memory device that offers high-speed data transfer, non-volatile storage, and low power consumption. It finds applications in various electronic devices and provides reliable data storage and retrieval capabilities. While it has certain limitations, its advantages make it a popular choice for many manufacturers in the industry.