MT45W1MW16BAFB-708 WT TR

Basic Information Overview

• Category: Memory chip
• Use: Data storage in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed read and write operations
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Provides reliable and efficient data storage for electronic devices
• Packaging/Quantity: Available in reels, quantity varies based on customer requirements

Specifications

• Model: MT45W1MW16BAFB-708 WT TR
• Memory Type: NOR Flash
• Capacity: 1 Megabit (128 Kilobytes)
• Organization: 1M x 16 bits
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Speed: Fast access time of 70 ns
• Interface: Parallel

Detailed Pin Configuration

The MT45W1MW16BAFB-708 WT TR has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 20 | DQ0-DQ15 | Data inputs/outputs | | 21 | WE# | Write Enable input | | 22 | CE# | Chip Enable input | | 23 | OE# | Output Enable input | | 24 | RP# | Reset/Power-down input | | 25 | RY/BY# | Ready/Busy output | | 26 | VSS | Ground |

Functional Features

• High-speed read and write operations allow for quick data access and storage.
• Non-volatile memory ensures data retention even when power is disconnected.
• Low power consumption makes it suitable for battery-powered devices.
• Reliable and durable, with a long lifespan.
• Easy integration into electronic devices due to its compact BGA package.

Advantages

• Fast access time improves overall system performance.
• Non-volatile memory eliminates the need for constant data backup.
• Low power consumption extends battery life in portable devices.
• Compact package saves space on PCBs.
• High reliability ensures data integrity.

Disadvantages

• Limited storage capacity compared to other memory options.
• Higher cost per unit compared to some alternative models.
• Requires additional circuitry for proper interfacing.

Working Principles

The MT45W1MW16BAFB-708 WT TR operates based on NOR Flash memory technology. It uses a parallel interface to communicate with the host device. When data needs to be stored, the chip enables the write operation by receiving the appropriate control signals. The data is then written to the specified memory address. During read operations, the chip retrieves the stored data from the requested memory location and outputs it to the host device.

Detailed Application Field Plans

The MT45W1MW16BAFB-708 WT TR is commonly used in various electronic devices that require reliable and fast data storage. Some of the application fields include: - Mobile phones - Tablets - Digital cameras - Set-top boxes - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT25QL128ABA1EW7-0SIT: 128 Megabit NOR Flash memory chip with similar characteristics and package.
• S25FL064LABMFI011: 64 Megabit NOR Flash memory chip with comparable specifications.
• W25Q32JVSSIQ: 32 Megabit NOR Flash memory chip with lower capacity but similar features.

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