MT45W1MW16BAFB-706 WT TR

Basic Information Overview

• Category: Memory chip
• Use: Data storage and retrieval in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed operation
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Provides reliable and efficient data storage solution for various electronic devices
• Packaging/Quantity: Available in reels, quantity depends on customer requirements

Specifications

• Capacity: 1 Megabit (128 Kilobytes)
• Organization: 64K x 16 bits
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Erase/Program Cycle Endurance: 100,000 cycles

Detailed Pin Configuration

The MT45W1MW16BAFB-706 WT TR has the following pin configuration:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A15 | Address inputs | | 18 | CE | Chip enable | | 19 | OE | Output enable | | 20 | WE | Write enable | | 21 | I/O0-I/O15 | Data input/output | | 22 | RY/BY# | Ready/Busy status output | | 23 | RESET# | Reset input |

Functional Features

• Non-volatile memory retains data even when power is removed
• High-speed operation allows for quick data access
• Low power consumption extends battery life in portable devices
• Reliable and durable, with high endurance for erase/program cycles
• Easy integration into electronic devices due to parallel interface

Advantages

• Provides efficient and reliable data storage solution
• High-speed operation enhances device performance
• Low power consumption extends battery life
• Compact BGA package allows for space-saving integration
• Wide operating temperature range enables usage in various environments

Disadvantages

• Limited capacity compared to newer memory technologies
• Parallel interface may require additional circuitry for compatibility with some devices

Working Principles

The MT45W1MW16BAFB-706 WT TR is based on Flash memory technology. It utilizes a grid of memory cells, where each cell can store multiple bits of data. The data is stored by trapping electric charges within the memory cells. These charges can be retained even when power is removed, making it a non-volatile memory.

Detailed Application Field Plans

The MT45W1MW16BAFB-706 WT TR is commonly used in various electronic devices that require reliable and efficient data storage. Some application fields include: - Mobile phones - Tablets - Digital cameras - Portable media players - Automotive electronics - Industrial control systems

Detailed and Complete Alternative Models

• MT45W1MW16BAFB-706 WT TR is part of the MT45W1MW16B family, which includes different variants with varying specifications and features. Some alternative models within the same family are:
  • MT45W1MW16BAFB-70 WT TR
  • MT45W1MW16BAFB-70 IT TR
  • MT45W1MW16BAFB-75 WT TR
  • MT45W1MW16BAFB-75 IT TR

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