MT45W1MW16BAFB-706 WT

Basic Information Overview

• Category: Memory chip
• Use: Storage and retrieval of digital data in electronic devices
• Characteristics:
  • Non-volatile memory
  • High-speed operation
  • Low power consumption
• Package: BGA (Ball Grid Array)
• Essence: Provides reliable and efficient data storage solution for electronic devices
• Packaging/Quantity: Available in reels, typically containing a certain number of chips per reel

Specifications

• Capacity: 1 Megabit (128 kilobytes)
• Organization: 1M x 16 bits
• Supply Voltage: 2.7V to 3.6V
• Operating Temperature Range: -40°C to +85°C
• Interface: Parallel
• Access Time: 70 ns
• Data Retention: Up to 20 years

Detailed Pin Configuration

The MT45W1MW16BAFB-706 WT has a total of 48 pins. The pin configuration is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power supply voltage | | 2 | A0-A19 | Address inputs | | 21 | DQ0-DQ15 | Data inputs/outputs | | 22 | WE | Write enable | | 23 | CE | Chip enable | | 24 | OE | Output enable | | 25 | BYTE | Byte enable | | 26 | RY/BY# | Ready/busy output | | 27 | RESET# | Reset input | | 28 | WP# | Write protect input |

(Note: This is a simplified pin configuration. Please refer to the datasheet for the complete pinout.)

Functional Features

• High-speed operation allows for fast data access and retrieval.
• Non-volatile memory ensures data retention even when power is removed.
• Low power consumption makes it suitable for battery-powered devices.
• BGA package provides a compact and reliable form factor.

Advantages and Disadvantages

Advantages: - Fast access time enhances overall system performance. - Non-volatile nature ensures data integrity during power cycles. - Low power consumption prolongs battery life in portable devices. - Compact BGA package saves board space and improves reliability.

Disadvantages: - Limited capacity compared to higher-density memory chips. - Parallel interface may require additional circuitry for interfacing with modern systems.

Working Principles

The MT45W1MW16BAFB-706 WT operates based on the principles of flash memory technology. It utilizes floating-gate transistors to store and retrieve digital data. When data is written, charges are trapped in the floating gate, altering the transistor's conductive properties. These charges can be read back later to retrieve the stored information.

Detailed Application Field Plans

The MT45W1MW16BAFB-706 WT is commonly used in various electronic devices that require non-volatile storage, such as: - Consumer electronics (e.g., smartphones, tablets, digital cameras) - Automotive applications (e.g., infotainment systems, instrument clusters) - Industrial equipment (e.g., control systems, data loggers) - Medical devices (e.g., patient monitors, diagnostic equipment)

Detailed and Complete Alternative Models

• MT45W1MW16BAFB-70 WT
• MT45W1MW16BAFB-707 WT
• MT45W1MW16BAFB-708 WT

(Note: This is not an exhaustive list. Please refer to the manufacturer's documentation for a complete list of alternative models.)

This concludes the encyclopedia entry for the MT45W1MW16BAFB-706 WT memory chip.