MT41J64M16JT-125E:G

Product Overview

Category

MT41J64M16JT-125E:G belongs to the category of dynamic random-access memory (DRAM) modules.

Use

This product is primarily used in computer systems, servers, and other electronic devices that require high-speed data storage and retrieval.

Characteristics

• High-speed operation
• Large storage capacity
• Low power consumption
• Compact form factor
• Reliable performance

Package

MT41J64M16JT-125E:G is packaged in a small outline dual in-line memory module (SODIMM) format. This package allows for easy installation and compatibility with various devices.

Essence

The essence of MT41J64M16JT-125E:G lies in its ability to provide fast and efficient data storage and retrieval, enhancing the overall performance of electronic devices.

Packaging/Quantity

MT41J64M16JT-125E:G is typically packaged individually or in sets of multiple modules, depending on the manufacturer's specifications and customer requirements.

Specifications

• Memory Type: DDR3 SDRAM
• Capacity: 1 Gigabit (64 Megabytes)
• Organization: 16 Meg x 16
• Speed: 125 MHz
• Voltage: 1.5V
• Operating Temperature Range: -40°C to +85°C
• RoHS Compliance: Yes

Detailed Pin Configuration

The pin configuration of MT41J64M16JT-125E:G is as follows:

1. VDD
2. DQ0
3. DQ1
4. DQ2
5. DQ3
6. DQ4
7. DQ5
8. DQ6
9. DQ7
10. VSS
11. DQ8
12. DQ9
13. DQ10
14. DQ11
15. DQ12
16. DQ13
17. DQ14
18. DQ15
19. VSS
20. A0
21. A1
22. A2
23. A3
24. A4
25. A5
26. A6
27. A7
28. VSS
29. A8
30. A9
31. A10
32. A11
33. A12
34. A13
35. A14
36. A15
37. VSS
38. BA0
39. BA1
40. RAS#
41. CAS#
42. WE#
43. CS#
44. VSS
45. DM0
46. DM1
47. VREF
48. VDD

Functional Features

• High-speed data transfer rate
• Burst mode operation
• Auto-refresh and self-refresh modes
• On-die termination (ODT) for improved signal integrity
• Error correction code (ECC) support (optional)

Advantages

• Fast and efficient data storage and retrieval
• Low power consumption
• Compact form factor for easy integration
• Reliable performance and durability
• Compatibility with various electronic devices

Disadvantages

• Limited storage capacity compared to other memory technologies
• Higher cost per unit compared to some alternative memory options

Working Principles

MT41J64M16JT-125E:G operates based on the principles of DDR3 SDRAM technology. It stores and retrieves data by utilizing a synchronous interface and internal clocking mechanism. The memory cells within the module are organized in a specific configuration, allowing for rapid access and manipulation of data.

Detailed Application Field Plans

MT41J64M16JT-125E:G finds applications in a wide range of electronic devices, including but not limited to: - Laptops and notebooks - Desktop computers - Servers - Networking equipment - Industrial control systems - Embedded systems

Detailed and Complete Alternative Models

Some alternative models that can be considered as alternatives to MT41J64M16JT-125E:G include: - MT41K256M16HA-125:E - MT41K512M16HA-125:E - MT41K1G8SN-125:E - MT41K2G4SN-125:E

These alternative models offer similar functionality and characteristics, but may differ in terms of capacity, speed, or other specifications.

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