MT29F8G08BAAWP:A TR

Product Overview

Category

MT29F8G08BAAWP:A TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F8G08BAAWP:A TR offers a large storage capacity, allowing users to store a significant amount of data.
• Fast data transfer rate: It provides high-speed data transfer, enabling quick access to stored information.
• Compact package: The product comes in a compact package, making it suitable for integration into small-sized electronic devices.
• Reliable performance: It offers reliable performance with low power consumption and high endurance.

Package and Quantity

The MT29F8G08BAAWP:A TR is packaged in a surface-mount TSOP (Thin Small Outline Package) and is available in a quantity of one unit per package.

Specifications

• Storage Capacity: 8 gigabytes (GB)
• Interface: NAND
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)

Pin Configuration (Detailed)

The pin configuration of MT29F8G08BAAWP:A TR is as follows:

1. VCC: Power supply voltage
2. GND: Ground
3. A0-A18: Address inputs
4. CLE: Command latch enable
5. ALE: Address latch enable
6. CE#: Chip enable
7. RE#: Read enable
8. WE#: Write enable
9. R/B#: Ready/Busy status
10. DQ0-DQ7: Data input/output

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasing of data in block-sized units.
• Random Access: Provides random access to any memory location for efficient data retrieval.
• Error Correction Code (ECC): Implements ECC algorithms to ensure data integrity and reliability.

Advantages

• High storage capacity allows for extensive data storage.
• Fast data transfer rate enables quick access to stored information.
• Compact package facilitates integration into small-sized electronic devices.
• Reliable performance with low power consumption and high endurance.

Disadvantages

• Limited lifespan due to a finite number of program/erase cycles.
• Higher cost compared to other types of memory technologies.

Working Principles

The MT29F8G08BAAWP:A TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. The stored charge determines the binary state of each memory cell, representing either a "0" or a "1". Data is accessed by applying appropriate voltage levels to the address inputs and control signals.

Detailed Application Field Plans

The MT29F8G08BAAWP:A TR finds applications in various electronic devices that require non-volatile storage, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed Alternative Models

Other alternative models that offer similar functionality and specifications to MT29F8G08BAAWP:A TR include: - Samsung K9K8G08U0A - Toshiba TH58NVG6D2FLA89 - Micron MT29F8G08ABACAWP

In conclusion, the MT29F8G08BAAWP:A TR is a NAND flash memory product with high storage capacity, fast data transfer rate, and reliable performance. It is widely used in various electronic devices for data storage purposes.