MT29F8G08ABACAM71M3WC1

Product Overview

Category

MT29F8G08ABACAM71M3WC1 belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F8G08ABACAM71M3WC1 offers a storage capacity of 8 gigabytes (GB).
• Fast data transfer rate: It provides high-speed data transfer, allowing for quick access to stored information.
• Reliable performance: This NAND flash memory ensures reliable performance with its advanced error correction techniques.
• Low power consumption: The product is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: MT29F8G08ABACAM71M3WC1 comes in a compact form factor, enabling easy integration into various electronic devices.

Package and Quantity

The MT29F8G08ABACAM71M3WC1 NAND flash memory is typically packaged in a small surface-mount package. The exact packaging and quantity may vary depending on the manufacturer and customer requirements.

Specifications

• Storage Capacity: 8 GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Endurance: Up to 100,000 program/erase cycles

Pin Configuration

The detailed pin configuration of MT29F8G08ABACAM71M3WC1 is as follows:

| Pin Number | Pin Name | Description | |------------|----------|-------------| | 1 | VCC | Power Supply | | 2 | GND | Ground | | 3 | CE# | Chip Enable | | 4 | RE# | Read Enable | | 5 | WE# | Write Enable | | 6 | A0-A18 | Address Inputs | | 7 | DQ0-DQ15 | Data Inputs/Outputs | | 8 | R/B# | Ready/Busy Status | | 9 | CLE | Command Latch Enable | | 10 | ALE | Address Latch Enable | | 11 | WP# | Write Protect | | 12 | RST# | Reset |

Functional Features

• Page Program: MT29F8G08ABACAM71M3WC1 supports fast page programming, allowing data to be written in small increments.
• Block Erase: It enables the erasure of entire blocks of data, providing flexibility for managing storage space.
• Random Access: The product allows random access to any memory location, facilitating efficient data retrieval.
• Error Correction: Advanced error correction techniques ensure data integrity and reliability.
• Wear-Leveling: This feature evenly distributes write operations across memory cells, extending the lifespan of the NAND flash memory.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Low power consumption
• Compact form factor
• Reliable performance

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Relatively higher cost per gigabyte compared to traditional hard disk drives

Working Principles

MT29F8G08ABACAM71M3WC1 utilizes NAND flash memory technology. It stores data by trapping electric charges in a grid of memory cells. These cells are organized into pages and blocks, allowing for efficient read and write operations. When data is written, the charges are stored in the memory cells. During read operations, the charges are detected and converted back into digital data.

Application Field Plans

MT29F8G08ABACAM71M3WC1 finds applications in various electronic devices that require high-capacity data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras and camcorders - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Alternative Models

There are several alternative models available in the market that offer similar functionality and specifications as MT29F8G08ABACAM71M3WC1. Some notable alternatives include: - Samsung K9K8G08U0B - Toshiba TH58NVG7D2FLA89 - Micron MT29F8G08ABADAWP

These alternative models can be considered based on specific requirements and compatibility with the target device.

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