MT29F4G08ABCWC-ET:C TR

Product Overview

Category

The MT29F4G08ABCWC-ET:C TR belongs to the category of NAND flash memory chips.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F4G08ABCWC-ET:C TR offers a storage capacity of 4 gigabits (4 Gb).
• Fast data transfer rate: It provides high-speed data transfer, enabling quick read and write operations.
• Reliable performance: This NAND flash memory chip ensures reliable and consistent performance over extended periods.
• Low power consumption: It is designed to consume minimal power, making it suitable for battery-powered devices.
• Compact package: The MT29F4G08ABCWC-ET:C TR comes in a small form factor, allowing for easy integration into various electronic devices.

Package and Quantity

The MT29F4G08ABCWC-ET:C TR is typically packaged in a surface-mount technology (SMT) package. The exact package type may vary depending on the manufacturer. It is commonly available in reels or trays, with quantities ranging from hundreds to thousands of units per package.

Specifications

• Memory Type: NAND Flash
• Capacity: 4 Gb
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: SMT
• Package Dimensions: [Insert dimensions]
• Pin Count: [Insert pin count]

Detailed Pin Configuration

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Functional Features

• Page Program Operation: The MT29F4G08ABCWC-ET:C TR supports page program operations, allowing data to be written in small increments.
• Block Erase Operation: It enables the erasure of large blocks of data, providing flexibility in managing memory space.
• Read and Write Operations: This NAND flash memory chip allows for high-speed read and write operations, facilitating efficient data access.
• Error Correction Code (ECC): The MT29F4G08ABCWC-ET:C TR incorporates ECC algorithms to ensure data integrity and reliability.
• Wear-Leveling: It implements wear-leveling techniques to distribute data evenly across memory cells, extending the lifespan of the chip.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Low power consumption
• Compact form factor

Disadvantages

• Limited endurance: NAND flash memory chips have a finite number of program/erase cycles before they may become unreliable.
• Susceptible to data loss: Power interruptions during write operations can lead to data corruption or loss.

Working Principles

The MT29F4G08ABCWC-ET:C TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells that store data as electrical charges. These cells are organized into pages and blocks, with each page typically storing multiple kilobytes of data. To write data, the charge level of specific memory cells is adjusted. Reading data involves measuring the charge levels within the cells. The chip's controller manages these operations and ensures data integrity through error correction techniques.

Detailed Application Field Plans

The MT29F4G08ABCWC-ET:C TR finds application in various electronic devices that require non-volatile data storage. Some potential application fields include: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

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[Provide a list of alternative NAND flash memory chips that offer similar specifications and features.]

Note: The content provided above is a general structure for an encyclopedia entry. Please ensure to fill in the specific details, dimensions, pin count, and alternative models based on the actual product information.