Micron Technology Inc.
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MT29F4G08ABCWC:C TR

MT29F4G08ABCWC:C TR

Product Overview

Category

MT29F4G08ABCWC:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

MT29F4G08ABCWC:C TR is available in a small form factor package, typically a surface mount device (SMD). The specific package type may vary depending on the manufacturer.

Essence

The essence of MT29F4G08ABCWC:C TR lies in its ability to store large amounts of data reliably and efficiently in electronic devices.

Packaging/Quantity

The product is usually packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F4G08ABCWC:C TR chips. The exact packaging and quantity may differ based on the supplier.

Specifications

  • Storage Capacity: 4GB
  • Interface: NAND
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 200MB/s (read), up to 100MB/s (write)

Detailed Pin Configuration

The pin configuration of MT29F4G08ABCWC:C TR may vary depending on the specific package and manufacturer. However, a typical pin configuration includes:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip enable
  4. CLE: Command latch enable
  5. ALE: Address latch enable
  6. WE: Write enable
  7. RE: Read enable
  8. R/B: Ready/busy status
  9. DQ0-DQ7: Data input/output lines

Functional Features

  • Block Erase: Allows for erasing large blocks of data simultaneously, improving efficiency.
  • Page Program: Enables fast and efficient programming of individual memory pages.
  • Read Retry: Enhances data reliability by automatically retrying read operations in case of errors.
  • Wear Leveling: Distributes write operations evenly across the memory cells, extending the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

  • High storage capacity allows for storing large amounts of data.
  • Fast read and write speeds enable quick access to stored information.
  • Non-volatile memory retains data even when power is disconnected.
  • Compact size makes it suitable for integration into various electronic devices.
  • Low power consumption helps prolong battery life in portable devices.

Disadvantages

  • Limited endurance compared to other types of memory.
  • Higher cost per unit of storage compared to traditional hard drives.
  • Susceptible to physical damage if mishandled or exposed to extreme conditions.

Working Principles

MT29F4G08ABCWC:C TR utilizes NAND flash memory technology. It consists of a grid of memory cells that store data as electrical charges. These cells are organized into blocks, which can be individually erased or programmed. When data is written, the charges are trapped within the memory cells, and they can be read back by detecting the presence or absence of charges.

Detailed Application Field Plans

MT29F4G08ABCWC:C TR finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, apps, and user data. 2. Digital cameras for storing photos and videos. 3. Solid-state drives (SSDs) for high-speed data storage in computers and servers. 4. Portable media players for storing music, videos, and other multimedia content.

Detailed and Complete Alternative Models

Some alternative models to MT29F4G08ABCWC:C TR include: - Samsung K9F4G08U0D - Toshiba TH58NVG5D2FLA89 - Micron MT29F4G08ABADA

These models offer similar specifications and functionality, providing alternatives for different sourcing options or specific project requirements.

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技術ソリューションにおける MT29F4G08ABCWC:C TR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of MT29F4G08ABCWC:C TR in technical solutions:

  1. Q: What is MT29F4G08ABCWC:C TR? A: MT29F4G08ABCWC:C TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Q: What are the key features of MT29F4G08ABCWC:C TR? A: Some key features include a capacity of 4GB, SLC (Single-Level Cell) technology, and a compact form factor.

  3. Q: What are the typical applications of MT29F4G08ABCWC:C TR? A: MT29F4G08ABCWC:C TR is commonly used in various technical solutions such as embedded systems, industrial automation, automotive electronics, and consumer electronics.

  4. Q: How does MT29F4G08ABCWC:C TR connect to a system? A: MT29F4G08ABCWC:C TR uses a standard interface like NAND Flash Interface (NFI) or Serial Peripheral Interface (SPI) to connect to a system.

  5. Q: What is the operating voltage range for MT29F4G08ABCWC:C TR? A: The operating voltage range for MT29F4G08ABCWC:C TR is typically between 2.7V and 3.6V.

  6. Q: Can MT29F4G08ABCWC:C TR be used in harsh environments? A: Yes, MT29F4G08ABCWC:C TR is designed to withstand extended temperature ranges and is suitable for use in harsh environments.

  7. Q: Does MT29F4G08ABCWC:C TR support wear-leveling algorithms? A: Yes, MT29F4G08ABCWC:C TR supports wear-leveling algorithms to ensure even distribution of write and erase cycles, prolonging the lifespan of the memory.

  8. Q: What is the typical data transfer rate of MT29F4G08ABCWC:C TR? A: The typical data transfer rate of MT29F4G08ABCWC:C TR depends on the interface used but can range from a few megabytes per second to tens of megabytes per second.

  9. Q: Can MT29F4G08ABCWC:C TR be used for code storage in microcontrollers? A: Yes, MT29F4G08ABCWC:C TR can be used for code storage in microcontrollers, providing non-volatile storage for firmware or bootloaders.

  10. Q: Are there any specific precautions to consider when using MT29F4G08ABCWC:C TR? A: It is important to follow the manufacturer's guidelines for proper handling, ESD protection, and voltage regulation to ensure reliable operation of MT29F4G08ABCWC:C TR.