Micron Technology Inc.
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MT29F4G08ABCHC:C TR

MT29F4G08ABCHC:C TR

Product Overview

Category

MT29F4G08ABCHC:C TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Compact size
  • Low power consumption

Package

MT29F4G08ABCHC:C TR comes in a small form factor package, typically a surface-mount technology (SMT) package.

Essence

The essence of MT29F4G08ABCHC:C TR lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

This product is usually packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F4G08ABCHC:C TR chips.

Specifications

  • Storage Capacity: 4GB
  • Interface: NAND
  • Voltage Range: 2.7V - 3.6V
  • Operating Temperature: -40°C to +85°C
  • Data Transfer Rate: Up to 400Mbps
  • Erase/Program Cycles: 10,000 minimum

Detailed Pin Configuration

The pin configuration of MT29F4G08ABCHC:C TR is as follows:

  1. VCC: Power supply voltage
  2. GND: Ground
  3. CE: Chip Enable
  4. RE: Read Enable
  5. WE: Write Enable
  6. A0-A18: Address Inputs
  7. DQ0-DQ7: Data Inputs/Outputs
  8. R/B: Ready/Busy status
  9. CLE: Command Latch Enable
  10. ALE: Address Latch Enable
  11. WP: Write Protect
  12. RST: Reset

Functional Features

  • Block Erase and Program Operations
  • Random Access Read Operation
  • Error Correction Code (ECC) Support
  • Wear-Leveling Algorithm for Enhanced Lifespan
  • Bad Block Management

Advantages and Disadvantages

Advantages

  • High storage capacity allows for ample data storage.
  • Fast read and write speeds enable quick data access.
  • Low power consumption helps conserve battery life in portable devices.
  • Compact size facilitates integration into various electronic devices.

Disadvantages

  • Limited erase/program cycles may affect the lifespan of the memory.
  • Vulnerable to physical damage, such as electrostatic discharge (ESD).
  • Relatively higher cost compared to other types of memory.

Working Principles

MT29F4G08ABCHC:C TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the voltage levels applied to it. The memory cells are arranged in blocks, and data can be written or erased at the block level. When reading data, the controller retrieves the stored voltage levels from the memory cells and converts them back into digital information.

Detailed Application Field Plans

MT29F4G08ABCHC:C TR finds applications in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Detailed and Complete Alternative Models

Some alternative models that offer similar functionality to MT29F4G08ABCHC:C TR include: - Samsung K9K8G08U0B - Toshiba TH58NVG5D2FTA20 - Micron MT29F4G08ABAEAWP

These models have comparable specifications and can be used as alternatives depending on specific requirements.

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技術ソリューションにおける MT29F4G08ABCHC:C TR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of MT29F4G08ABCHC:C TR in technical solutions:

  1. Q: What is MT29F4G08ABCHC:C TR? A: MT29F4G08ABCHC:C TR is a specific model of NAND flash memory chip manufactured by Micron Technology.

  2. Q: What are the key features of MT29F4G08ABCHC:C TR? A: Some key features include a capacity of 4GB, SLC (Single-Level Cell) technology, and a high-speed interface.

  3. Q: In what types of technical solutions can MT29F4G08ABCHC:C TR be used? A: MT29F4G08ABCHC:C TR can be used in various applications such as embedded systems, solid-state drives (SSDs), and industrial devices.

  4. Q: What is the voltage requirement for MT29F4G08ABCHC:C TR? A: MT29F4G08ABCHC:C TR operates at a voltage range of 2.7V to 3.6V.

  5. Q: What is the data transfer rate of MT29F4G08ABCHC:C TR? A: The data transfer rate of MT29F4G08ABCHC:C TR is typically up to 50 MB/s.

  6. Q: Can MT29F4G08ABCHC:C TR withstand extreme temperatures? A: Yes, MT29F4G08ABCHC:C TR is designed to operate reliably in a wide temperature range, typically from -40°C to +85°C.

  7. Q: Does MT29F4G08ABCHC:C TR support wear-leveling algorithms? A: Yes, MT29F4G08ABCHC:C TR supports wear-leveling algorithms to ensure even distribution of write and erase cycles across the memory cells.

  8. Q: Can MT29F4G08ABCHC:C TR be used in automotive applications? A: Yes, MT29F4G08ABCHC:C TR is suitable for automotive applications due to its high reliability and temperature tolerance.

  9. Q: What is the lifespan of MT29F4G08ABCHC:C TR? A: The lifespan of MT29F4G08ABCHC:C TR is typically specified by the number of program/erase cycles it can endure, which is usually in the range of thousands to millions.

  10. Q: Are there any specific software requirements for using MT29F4G08ABCHC:C TR? A: Yes, you will need appropriate device drivers and file system support to effectively utilize MT29F4G08ABCHC:C TR in your technical solution.

Please note that these answers are general and may vary depending on the specific implementation and requirements of your technical solution.