MT29F32G08CBADAWP:D TR

Product Overview

Category

MT29F32G08CBADAWP:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: MT29F32G08CBADAWP:D TR has a storage capacity of 32 gigabits (4 gigabytes).
• Fast data transfer rate: It offers high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: The NAND flash memory technology ensures reliable and durable data storage.
• Low power consumption: It operates at low power levels, making it suitable for battery-powered devices.
• Compact package: The product comes in a small form factor, enabling easy integration into different devices.

Package and Quantity

MT29F32G08CBADAWP:D TR is available in a surface-mount package. The exact package type and quantity may vary depending on the manufacturer's specifications.

Specifications

• Storage Capacity: 32 gigabits (4 gigabytes)
• Interface: NAND Flash
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 400 megabits per second (Mbps)
• Erase/Program Cycles: Up to 10,000 cycles

Pin Configuration

The detailed pin configuration for MT29F32G08CBADAWP:D TR can be found in the product datasheet provided by the manufacturer.

Functional Features

• Page Read and Program Operations: Allows reading and programming of data at the page level.
• Block Erase Operation: Enables erasing of data at the block level.
• Wear-Leveling: Distributes data evenly across memory blocks to extend the lifespan of the NAND flash memory.
• Error Correction Code (ECC): Implements ECC algorithms to detect and correct errors during data transfer.

Advantages

• High storage capacity allows for ample data storage.
• Fast data transfer rate ensures quick access to stored information.
• Reliable performance ensures data integrity and durability.
• Low power consumption prolongs battery life in portable devices.
• Compact package facilitates easy integration into various electronic devices.

Disadvantages

• Limited erase/program cycles may affect the lifespan of the memory.
• Higher cost compared to other types of non-volatile memory.
• Susceptible to data corruption if not properly managed or protected.

Working Principles

MT29F32G08CBADAWP:D TR utilizes NAND flash memory technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of data using different voltage levels. The memory cells are arranged in blocks, and each block consists of multiple pages. Data can be read from or written to individual pages within a block.

During programming, an electrical charge is applied to the memory cells to store data. Erasing involves removing the stored charge from the cells. Wear-leveling algorithms ensure that data is distributed evenly across the memory blocks, preventing excessive wear on specific cells.

Application Field Plans

MT29F32G08CBADAWP:D TR finds applications in various electronic devices, including: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems - Industrial control systems

Alternative Models

Several alternative models with similar specifications and features are available in the market. Some notable alternatives to MT29F32G08CBADAWP:D TR include: - Samsung K9GAG08U0E - Toshiba TH58NVG5D2ETA20 - Micron MT29F32G08CBACAWP:D TR

These alternative models can be considered based on specific requirements and compatibility with the target application.

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