MT29F2G16ABDHC-ET:D TR

Product Overview

Category

MT29F2G16ABDHC-ET:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer
• Non-volatile memory
• Large storage capacity
• Compact size
• Low power consumption

Package

MT29F2G16ABDHC-ET:D TR comes in a small form factor package, typically a surface-mount technology (SMT) package. The specific package type may vary depending on the manufacturer.

Essence

The essence of MT29F2G16ABDHC-ET:D TR lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

This product is usually packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F2G16ABDHC-ET:D TR chips. The exact packaging and quantity may differ based on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 2GB (2 Gigabytes)
• Organization: 2G x 8
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: VFBGA (Very Fine Pitch Ball Grid Array)

Detailed Pin Configuration

The pin configuration of MT29F2G16ABDHC-ET:D TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. A0-A18 - Address inputs
4. DQ0-DQ15 - Data input/output
5. WE# - Write enable
6. RE# - Read enable
7. CLE - Command latch enable
8. ALE - Address latch enable
9. CE# - Chip enable
10. R/B# - Ready/Busy status

Functional Features

• Page Program Operation: Allows data to be written in page-sized increments.
• Block Erase Operation: Enables erasing of data in block-sized units.
• Random Access: Provides quick access to specific memory locations.
• Error Correction Code (ECC): Ensures data integrity by detecting and correcting errors during read and write operations.
• Wear-Leveling: Distributes data evenly across the memory cells to extend the lifespan of the NAND flash.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rates
• Compact size
• Low power consumption
• Non-volatile memory (retains data even when power is disconnected)

Disadvantages

• Limited endurance (finite number of program/erase cycles)
• Relatively higher cost compared to other types of memory

Working Principles

MT29F2G16ABDHC-ET:D TR utilizes NAND flash technology, which stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information using a combination of voltage levels. When data needs to be written, the appropriate voltages are applied to the selected memory cells. During read operations, the stored voltages are measured to retrieve the stored data.

Detailed Application Field Plans

MT29F2G16ABDHC-ET:D TR finds applications in various electronic devices that require reliable and high-capacity data storage. Some common application fields include:

1. Smartphones and tablets
2. Digital cameras
3. Solid-state drives (SSDs)
4. Portable media players
5. Automotive infotainment systems
6. Industrial control systems

Detailed and Complete Alternative Models

1. MT29F2G16ABDHC-ET:E TR
2. MT29F2G16ABDHC-ET:F TR
3. MT29F2G16ABDHC-ET:G TR
4. MT29F2G16ABDHC-ET:H TR
5. MT29F2G16ABDHC-ET:I TR

These alternative models offer similar specifications and functionality to MT29F2G16ABDHC-ET:D TR, providing options for different application requirements.

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