MT29F2G16AADWP-ET:D TR

Product Overview

Category

The MT29F2G16AADWP-ET:D TR belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity: The MT29F2G16AADWP-ET:D TR offers a storage capacity of 2 gigabits (2 Gb).
• Fast data transfer rate: It supports high-speed data transfer, allowing for quick read and write operations.
• Reliable performance: This NAND flash memory provides reliable and durable data storage, ensuring data integrity even under demanding conditions.

Package

The MT29F2G16AADWP-ET:D TR comes in a small form factor package, making it suitable for compact electronic devices. It utilizes a wafer-level chip-scale package (WLCSP) technology.

Essence

The essence of this product lies in its ability to store and retrieve digital data reliably and efficiently.

Packaging/Quantity

The MT29F2G16AADWP-ET:D TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 2 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package/Case: WLCSP
• Data Retention: Up to 10 years
• Endurance: Up to 100,000 program/erase cycles

Detailed Pin Configuration

The MT29F2G16AADWP-ET:D TR has a specific pin configuration that enables its proper functioning within a system. The detailed pin configuration is as follows:

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A18: Address inputs
4. DQ0-DQ15: Data input/output lines
5. WE#: Write enable control
6. CE#: Chip enable control
7. CLE: Command latch enable
8. ALE: Address latch enable
9. RE#: Read enable control
10. R/B#: Ready/busy status output

Functional Features

• High-speed data transfer: The MT29F2G16AADWP-ET:D TR supports fast read and write operations, enabling efficient data access.
• Error correction: It incorporates error correction codes (ECC) to ensure data integrity and reliability.
• Wear leveling: This NAND flash memory utilizes wear leveling algorithms to distribute write operations evenly across memory cells, extending the lifespan of the device.
• Bad block management: It includes mechanisms for identifying and managing bad blocks, ensuring optimal performance and storage capacity.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast data transfer rate
• Reliable performance
• Compact form factor
• Error correction capabilities

Disadvantages

• Limited endurance compared to other non-volatile memory technologies
• Higher cost per bit compared to some alternative memory solutions

Working Principles

The MT29F2G16AADWP-ET:D TR operates based on the principles of NAND flash memory technology. It utilizes a grid of memory cells, where each cell stores multiple bits of data by trapping electrons in a floating gate. The presence or absence of trapped electrons determines the stored data value. To read or write data, the appropriate voltages are applied to the memory cells through the pin connections.

Detailed Application Field Plans

The MT29F2G16AADWP-ET:D TR finds applications in various electronic devices and systems that require reliable and high-capacity data storage. Some of the specific application field plans include:

1. Smartphones and tablets: Used for storing operating systems, applications, and user data.
2. Digital cameras: Provides storage for photos and videos.
3. Solid-state drives (SSDs): Used as primary or secondary storage in computer systems.
4. Industrial control systems: Enables data logging and storage in industrial automation applications.
5. Automotive electronics: Used for data storage in infotainment systems, navigation systems, and instrument clusters.

Detailed and Complete Alternative Models

1. MT29F2G08ABAEAWP-IT:E TR

   • Memory Type: NAND Flash
   • Capacity: 2 Gb
   • Interface: Parallel
   • Voltage Supply: 2.7V - 3.6V
   • Package/Case: WLCSP

2. MT29F2G16ABBEAH4-IT:E TR

   • Memory Type: NAND Flash
   • Capacity: 2 Gb
   • Interface