MT29F2G08ABDHC-ET:D TR

Product Overview

Category

MT29F2G08ABDHC-ET:D TR belongs to the category of NAND Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-speed data transfer rate
• Large storage capacity
• Low power consumption
• Compact size
• Durable and reliable

Package

MT29F2G08ABDHC-ET:D TR comes in a small form factor package, designed to fit seamlessly into modern electronic devices.

Essence

The essence of this product lies in its ability to store and retrieve digital data quickly and efficiently, providing ample storage space for various applications.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F2G08ABDHC-ET:D TR units. The exact packaging and quantity may vary depending on the manufacturer.

Specifications

• Storage Capacity: 2GB
• Interface: NAND Flash
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Data Transfer Rate: Up to 400 Mbps
• Erase/Program Cycles: Up to 100,000 cycles

Detailed Pin Configuration

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip Enable
4. RE - Read Enable
5. WE - Write Enable
6. A0-A18 - Address Inputs
7. DQ0-DQ15 - Data Input/Output
8. R/B - Ready/Busy Status
9. WP - Write Protect
10. NC - No Connection

Functional Features

• High-speed read and write operations
• Error correction capabilities
• Wear-leveling algorithms for extended lifespan
• Bad block management
• Power-saving features
• Data protection mechanisms

Advantages

• Fast data transfer rate enhances overall system performance
• Large storage capacity allows for extensive data storage
• Low power consumption prolongs battery life in portable devices
• Compact size enables integration into space-constrained designs
• Durable and reliable, ensuring data integrity and longevity

Disadvantages

• Limited erase/program cycles may affect the lifespan of the product
• Higher cost compared to other types of memory technologies
• Susceptible to data corruption in case of power failure during write operations

Working Principles

MT29F2G08ABDHC-ET:D TR utilizes NAND flash memory technology. It stores data by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured, allowing retrieval of the stored information.

Detailed Application Field Plans

MT29F2G08ABDHC-ET:D TR finds applications in various electronic devices, including: 1. Smartphones and tablets for storing operating systems, applications, and user data. 2. Digital cameras for storing high-resolution photos and videos. 3. Solid-state drives (SSDs) for replacing traditional hard disk drives (HDDs) in computers, providing faster boot times and improved system responsiveness.

Detailed and Complete Alternative Models

1. MT29F2G16ABDHC-ET:D TR - Similar to MT29F2G08ABDHC-ET:D TR but with double the storage capacity (4GB).
2. MT29F4G08ABDHC-ET:D TR - Similar to MT29F2G08ABDHC-ET:D TR but with higher erase/program cycles (up to 200,000 cycles).
3. MT29F2G08ABDHC-ET:E TR - Similar to MT29F2G08ABDHC-ET:D TR but with extended temperature range (-40°C to +105°C).

In conclusion, MT29F2G08ABDHC-ET:D TR is a NAND flash memory product that offers high-speed data transfer, large storage capacity, and low power consumption. It finds applications in various electronic devices and provides reliable data storage. While it has certain limitations, such as limited erase/program cycles, its advantages outweigh the disadvantages, making it a popular choice in the industry.