MT29F2G08AADWP:D TR

Product Overview

Category

MT29F2G08AADWP:D TR belongs to the category of NAND Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT29F2G08AADWP:D TR is available in a small form factor package, which makes it suitable for integration into compact electronic devices.

Essence

The essence of MT29F2G08AADWP:D TR lies in its ability to store and retrieve large amounts of data reliably and quickly.

Packaging/Quantity

This product is typically packaged in reels or trays, with each reel or tray containing a specific quantity of MT29F2G08AADWP:D TR units.

Specifications

• Storage Capacity: 2GB
• Interface: NAND
• Voltage Range: 2.7V - 3.6V
• Operating Temperature: -40°C to +85°C
• Data Transfer Rate: Up to 200MB/s (Read), Up to 100MB/s (Write)

Detailed Pin Configuration

The pin configuration of MT29F2G08AADWP:D TR is as follows:

1. VCC - Power supply voltage
2. GND - Ground
3. CE - Chip enable
4. RE - Read enable
5. WE - Write enable
6. A0-A18 - Address inputs
7. DQ0-DQ15 - Data input/output
8. R/B - Ready/busy status
9. CLE - Command latch enable
10. ALE - Address latch enable

Functional Features

• Block Erase: Allows for erasing large blocks of data simultaneously
• Page Program: Enables writing data to individual memory pages
• Read Operation: Facilitates fast and reliable retrieval of stored data
• Wear Leveling: Distributes write operations evenly across memory cells, extending the lifespan of the NAND flash memory

Advantages and Disadvantages

Advantages

• High storage capacity allows for ample data storage
• Fast read and write speeds enhance overall system performance
• Compact size enables integration into small electronic devices
• Low power consumption prolongs battery life

Disadvantages

• Limited endurance compared to other types of non-volatile memory
• Susceptible to data corruption in case of power failure during write operations

Working Principles

MT29F2G08AADWP:D TR utilizes NAND flash memory technology. It stores data by trapping electric charges within memory cells, which are organized in a grid-like structure. The presence or absence of charges determines the binary state of each cell, representing either a "0" or a "1". Data can be written to and read from these cells using specific electrical signals.

Detailed Application Field Plans

MT29F2G08AADWP:D TR finds application in various electronic devices, including but not limited to: - Smartphones and tablets - Digital cameras - Solid-state drives (SSDs) - Portable media players - Automotive infotainment systems

Detailed and Complete Alternative Models

Some alternative models to MT29F2G08AADWP:D TR include: - Samsung K9F2G08U0M - Toshiba TH58NVG6D2FLA89 - Micron MT29F2G08ABAEA

These models offer similar functionality and specifications, providing options for different design requirements.

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