MT29F1G16ABBDAHC-IT:D

Product Overview

Category

The MT29F1G16ABBDAHC-IT:D belongs to the category of NAND flash memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• High-density storage: The MT29F1G16ABBDAHC-IT:D offers a large storage capacity of 1 gigabit (1 Gb).
• Non-volatile memory: It retains data even when power is disconnected.
• Fast read and write speeds: This NAND flash memory provides quick access to stored data.
• Reliable performance: It has a high endurance level and can withstand numerous read and write cycles.
• Compact package: The MT29F1G16ABBDAHC-IT:D comes in a small form factor, making it suitable for space-constrained devices.
• Low power consumption: It operates efficiently, consuming minimal power during data transfer.

Package and Quantity

The MT29F1G16ABBDAHC-IT:D is packaged in a surface-mount technology (SMT) package. It is available in tape and reel packaging, with a quantity of 2500 units per reel.

Specifications

• Memory Type: NAND Flash
• Capacity: 1 Gb
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)
• Pin Count: 48

Detailed Pin Configuration

Pin | Name | Function --- | ---- | -------- 1 | A0 | Address Input 2 | A1 | Address Input 3 | A2 | Address Input 4 | A3 | Address Input 5 | A4 | Address Input 6 | A5 | Address Input 7 | A6 | Address Input 8 | A7 | Address Input 9 | A8 | Address Input 10 | A9 | Address Input 11 | A10 | Address Input 12 | A11 | Address Input 13 | A12 | Address Input 14 | A13 | Address Input 15 | A14 | Address Input 16 | A15 | Address Input 17 | CE# | Chip Enable Input 18 | CLE | Command Latch Enable Input 19 | WE# | Write Enable Input 20 | RE# | Read Enable Input 21 | WP# | Write Protect Input 22 | R/B# | Ready/Busy Output 23 | DQ0 | Data Input/Output 24 | DQ1 | Data Input/Output 25 | DQ2 | Data Input/Output 26 | DQ3 | Data Input/Output 27 | DQ4 | Data Input/Output 28 | DQ5 | Data Input/Output 29 | DQ6 | Data Input/Output 30 | DQ7 | Data Input/Output 31 | VCC | Power Supply 32 | VSS | Ground 33 | NC | No Connection 34 | NC | No Connection 35 | NC | No Connection 36 | NC | No Connection 37 | NC | No Connection 38 | NC | No Connection 39 | NC | No Connection 40 | NC | No Connection 41 | NC | No Connection 42 | NC | No Connection 43 | NC | No Connection 44 | NC | No Connection 45 | NC | No Connection 46 | NC | No Connection 47 | NC | No Connection 48 | NC | No Connection

Functional Features

• Page Program: The MT29F1G16ABBDAHC-IT:D allows data to be programmed in page-sized increments, enhancing efficiency.
• Block Erase: It supports block erase operations, enabling the deletion of large amounts of data at once.
• Random Access: This NAND flash memory provides random access to any location within its storage capacity.
• Error Correction Code (ECC): It incorporates ECC algorithms to detect and correct errors during data retrieval.
• Wear-Leveling: The product employs wear-leveling techniques to distribute write operations evenly across memory cells, extending the lifespan of the device.

Advantages and Disadvantages

Advantages

• High storage capacity
• Fast read and write speeds
• Compact form factor