MT28F640J3RG-115 ET TR

Product Overview

Category

MT28F640J3RG-115 ET TR belongs to the category of Flash Memory.

Use

It is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

• Non-volatile memory: Retains data even when power is turned off.
• High-speed read and write operations: Allows for quick access to stored data.
• Large storage capacity: Offers ample space for storing files, documents, and multimedia content.
• Compact size: Enables integration into small form factor devices.
• Durable and reliable: Withstands frequent read/write cycles without data loss.

Package

MT28F640J3RG-115 ET TR is available in a surface-mount package.

Essence

The essence of this product lies in its ability to provide reliable and high-capacity data storage for electronic devices.

Packaging/Quantity

MT28F640J3RG-115 ET TR is typically packaged in reels or trays and is available in varying quantities depending on customer requirements.

Specifications

• Memory Type: NAND Flash
• Capacity: 64 Megabits (8 Megabytes)
• Interface: Parallel
• Supply Voltage: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package Type: TSOP (Thin Small Outline Package)

Detailed Pin Configuration

1. VCC: Power supply voltage
2. GND: Ground reference
3. A0-A10: Address inputs
4. CE: Chip enable
5. WE: Write enable
6. OE: Output enable
7. I/O0-I/O7: Data input/output lines
8. RY/BY: Ready/Busy status output
9. WP: Write protect
10. RESET: Reset pin

Functional Features

• Page Program: Allows data to be written in page-sized increments.
• Block Erase: Enables erasure of large blocks of data for efficient memory management.
• Read Operation: Facilitates fast and reliable retrieval of stored data.
• Error Correction Code (ECC): Enhances data integrity by detecting and correcting errors during read operations.
• Wear Leveling: Distributes write operations evenly across memory cells, prolonging the lifespan of the flash memory.

Advantages and Disadvantages

Advantages

• High-speed data access
• Large storage capacity
• Compact form factor
• Durable and reliable
• Efficient memory management through block erase and wear leveling

Disadvantages

• Limited endurance: Flash memory has a finite number of write cycles before it may become unreliable.
• Relatively higher cost compared to other types of memory.

Working Principles

MT28F640J3RG-115 ET TR utilizes NAND flash technology for data storage. It consists of a grid of memory cells that store data as electrical charges. When data is written, the charges are trapped within the memory cells. During read operations, the charges are detected and converted back into digital information.

Detailed Application Field Plans

MT28F640J3RG-115 ET TR finds applications in various electronic devices, including: 1. Smartphones and tablets 2. Digital cameras 3. Solid-state drives (SSDs) 4. Portable media players 5. Automotive infotainment systems

Detailed and Complete Alternative Models

1. MT29F64G08CBAAA: 64 Gigabit (8 Gigabyte) NAND Flash Memory, BGA package.
2. S25FL064L: 64 Megabit (8 Megabyte) NOR Flash Memory, SOP package.
3. W25Q64JVZPIQ: 64 Megabit (8 Megabyte) Serial Flash Memory, WSON package.
4. MX25L6406EM2I-12G: 64 Megabit (8 Megabyte) Serial Flash Memory, SOP package.

These alternative models offer similar storage capacities and functionalities to MT28F640J3RG-115 ET TR, catering to different application requirements.

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