MT28F320J3RG-11 ET TR

Product Overview

Category

MT28F320J3RG-11 ET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and portable media players.

Characteristics

• High storage capacity
• Non-volatile memory
• Fast read and write speeds
• Compact size
• Low power consumption

Package

MT28F320J3RG-11 ET TR is available in a small form factor package, specifically designed for surface mount technology (SMT) applications.

Essence

The essence of this product lies in its ability to store and retrieve digital information reliably and efficiently.

Packaging/Quantity

MT28F320J3RG-11 ET TR is typically packaged in reels or trays, with each reel or tray containing a specific quantity of flash memory chips. The exact packaging and quantity may vary depending on the manufacturer's specifications.

Specifications

• Memory Type: NAND Flash
• Capacity: 32GB
• Interface: Parallel
• Voltage Supply: 2.7V - 3.6V
• Operating Temperature Range: -40°C to +85°C
• Package/Case: TSOP-48

Detailed Pin Configuration

The pin configuration of MT28F320J3RG-11 ET TR is as follows:

1. VCC
2. A0
3. A1
4. A2
5. A3
6. A4
7. A5
8. A6
9. A7
10. A8
11. A9
12. A10
13. A11
14. A12
15. A13
16. A14
17. A15
18. A16
19. A17
20. A18
21. A19
22. A20
23. A21
24. A22
25. A23
26. A24
27. A25
28. ALE
29. CLE
30. WE#
31. RE#
32. WP#
33. RY/BY#
34. CE#
35. OE#
36. BYTE#
37. NC
38. DQ0
39. DQ1
40. DQ2
41. DQ3
42. DQ4
43. DQ5
44. DQ6
45. DQ7
46. VSS
47. VSS
48. VCC

Functional Features

• High-speed data transfer
• Error correction and detection mechanisms
• Wear-leveling algorithms for extended lifespan
• Block erase and program operations
• Data protection features (e.g., write protection)

Advantages and Disadvantages

Advantages

• Large storage capacity
• Fast read and write speeds
• Compact size
• Low power consumption
• Reliable data retention
• Wide operating temperature range

Disadvantages

• Limited endurance (finite number of erase/write cycles)
• Higher cost compared to other memory technologies (e.g., HDD)

Working Principles

MT28F320J3RG-11 ET TR utilizes NAND flash memory technology. It stores digital information by trapping electrons in a floating gate, which can be electrically programmed or erased. When reading data, the stored charge is measured to determine the binary value.

Detailed Application Field Plans

MT28F320J3RG-11 ET TR finds applications in various electronic devices, including: - Smartphones - Tablets - Digital cameras - Portable media players - Solid-state drives (SSDs) - Industrial control systems - Automotive electronics

Detailed and Complete Alternative Models

• MT28F320J3RG-12 ET TR
• MT28F320J3RG-10 ET TR
• MT28F320J3RG-11 ET TR2
• MT28F320J3RG-11 ET TR3
• MT28F320J3RG-11 ET TR4

These alternative models offer similar specifications and functionality, providing flexibility for different design requirements.

In conclusion, MT28F320J3RG-11 ET TR is a high-capacity flash memory product used in various electronic devices. Its compact size, fast read/write speeds, and low power consumption make it an ideal choice for data storage applications. However, it has limitations in terms of endurance and cost compared to other memory technologies. Nonetheless, its reliable performance and wide operating temperature range make it suitable for diverse application fields.