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MT28F128J3RG-12 ET TR

MT28F128J3RG-12 ET TR

Product Overview

Category

MT28F128J3RG-12 ET TR belongs to the category of Flash Memory.

Use

This product is primarily used for data storage in various electronic devices such as smartphones, tablets, digital cameras, and solid-state drives (SSDs).

Characteristics

  • High storage capacity
  • Non-volatile memory
  • Fast read and write speeds
  • Low power consumption
  • Durable and reliable

Package

MT28F128J3RG-12 ET TR is available in a compact and standardized package that ensures easy integration into different electronic devices. The package is designed to protect the memory chip from external factors such as moisture, dust, and physical damage.

Essence

The essence of MT28F128J3RG-12 ET TR lies in its ability to store and retrieve digital information quickly and reliably, making it an essential component in modern electronic devices.

Packaging/Quantity

MT28F128J3RG-12 ET TR is typically packaged in reels or trays, depending on the manufacturer's specifications. The quantity per package may vary, but it is commonly available in bulk quantities suitable for large-scale production.

Specifications

  • Model: MT28F128J3RG-12 ET TR
  • Memory Type: NAND Flash
  • Capacity: 128GB
  • Interface: SATA III
  • Operating Voltage: 3.3V
  • Read Speed: Up to 550MB/s
  • Write Speed: Up to 520MB/s
  • Form Factor: 2.5-inch

Detailed Pin Configuration

The pin configuration of MT28F128J3RG-12 ET TR is as follows:

  1. VCC - Power supply voltage
  2. GND - Ground
  3. CE - Chip Enable
  4. R/B# - Ready/Busy
  5. WE# - Write Enable
  6. RE# - Read Enable
  7. A0-A18 - Address Inputs
  8. DQ0-DQ7 - Data Input/Output
  9. DQS - Data Strobe
  10. DM - Data Mask
  11. NC - No Connection

Functional Features

  • High-speed data transfer
  • Error correction and detection mechanisms
  • Wear-leveling algorithms for extended lifespan
  • Bad block management
  • Power-saving features
  • Compatibility with various operating systems and file systems

Advantages and Disadvantages

Advantages

  • Large storage capacity
  • Fast read and write speeds
  • Low power consumption
  • Compact form factor
  • High reliability and durability

Disadvantages

  • Relatively higher cost compared to traditional hard drives
  • Limited number of write cycles
  • Susceptible to physical damage if mishandled

Working Principles

MT28F128J3RG-12 ET TR utilizes NAND flash memory technology. It stores data in a series of memory cells organized in a grid-like structure. Each cell can store multiple bits of information by varying the electrical charge on its floating gate. The stored data can be accessed by applying appropriate voltage levels to the memory cells.

Detailed Application Field Plans

MT28F128J3RG-12 ET TR finds applications in various fields, including: 1. Consumer electronics (smartphones, tablets, digital cameras) 2. Automotive electronics (infotainment systems, navigation systems) 3. Industrial automation (embedded systems, control units) 4. Enterprise storage solutions (solid-state drives, servers)

Detailed and Complete Alternative Models

  1. Samsung 860 EVO
  2. Kingston A2000
  3. Western Digital Blue
  4. Crucial MX500
  5. SanDisk Ultra 3D

These alternative models offer similar specifications and functionality to MT28F128J3RG-12 ET TR, providing users with a range of options to choose from.

In conclusion, MT28F128J3RG-12 ET TR is a high-performance flash memory product that offers large storage capacity, fast data transfer speeds, and reliability. It finds applications in various electronic devices and industries, making it an essential component in the digital world.

技術ソリューションにおける MT28F128J3RG-12 ET TR の適用に関連する 10 件の一般的な質問と回答をリストします。

Sure! Here are 10 common questions and answers related to the application of MT28F128J3RG-12 ET TR in technical solutions:

  1. Question: What is the capacity of the MT28F128J3RG-12 ET TR?
    Answer: The MT28F128J3RG-12 ET TR has a capacity of 128 megabits (16 megabytes).

  2. Question: What is the operating voltage range for this memory device?
    Answer: The operating voltage range for the MT28F128J3RG-12 ET TR is typically between 2.7V and 3.6V.

  3. Question: Can this memory be used in industrial applications?
    Answer: Yes, the MT28F128J3RG-12 ET TR is suitable for use in industrial applications due to its wide temperature range and high reliability.

  4. Question: What is the access time of this memory device?
    Answer: The access time for the MT28F128J3RG-12 ET TR is 120 nanoseconds.

  5. Question: Does this memory support random access read and write operations?
    Answer: Yes, the MT28F128J3RG-12 ET TR supports random access read and write operations.

  6. Question: Is this memory compatible with standard microcontrollers?
    Answer: Yes, the MT28F128J3RG-12 ET TR is compatible with standard microcontrollers that support the required interface (e.g., parallel or serial).

  7. Question: Can this memory be used as a boot device?
    Answer: Yes, the MT28F128J3RG-12 ET TR can be used as a boot device in various embedded systems.

  8. Question: What is the endurance rating of this memory?
    Answer: The MT28F128J3RG-12 ET TR has an endurance rating of 100,000 program/erase cycles.

  9. Question: Does this memory support hardware data protection features?
    Answer: Yes, the MT28F128J3RG-12 ET TR supports various hardware data protection features like block locking and password protection.

  10. Question: Can this memory be used in automotive applications?
    Answer: Yes, the MT28F128J3RG-12 ET TR is suitable for use in automotive applications due to its high temperature tolerance and reliability.

Please note that these answers are based on general information about the MT28F128J3RG-12 ET TR and may vary depending on specific application requirements.