M58WR032KB70ZB6E
Product Overview
- Category: Integrated Circuit (IC)
- Use: Memory storage
- Characteristics: High capacity, fast access speed, non-volatile, low power consumption
- Package: BGA (Ball Grid Array)
- Essence: Non-volatile memory chip
- Packaging/Quantity: Individually packaged, quantity varies based on customer requirements
Specifications
- Manufacturer: Unknown
- Model: M58WR032KB70ZB6E
- Memory Type: Flash
- Capacity: 32 Megabits (4 Megabytes)
- Access Time: 70 nanoseconds
- Operating Voltage: 2.7V - 3.6V
- Interface: Parallel
- Operating Temperature: -40°C to +85°C
- Data Retention: Minimum 20 years
- Endurance: Minimum 100,000 write/erase cycles
Detailed Pin Configuration
The M58WR032KB70ZB6E has a total of 48 pins. The pin configuration is as follows:
- VCC
- A0
- A1
- A2
- A3
- A4
- A5
- A6
- A7
- A8
- A9
- A10
- A11
- A12
- A13
- A14
- A15
- A16
- A17
- A18
- A19
- A20
- A21
- A22
- A23
- A24
- A25
- A26
- A27
- A28
- A29
- A30
- A31
- DQ0
- DQ1
- DQ2
- DQ3
- DQ4
- DQ5
- DQ6
- DQ7
- WE#
- CE#
- OE#
- BYTE#
- VSS
- NC
- VCC
Functional Features
- Non-volatile memory: Retains data even when power is disconnected
- High capacity: 32 Megabits (4 Megabytes) of storage space
- Fast access speed: Access time of 70 nanoseconds
- Low power consumption: Operates at a voltage range of 2.7V - 3.6V
- Parallel interface: Allows for efficient data transfer
Advantages and Disadvantages
Advantages: - Large storage capacity - Fast access speed - Non-volatile memory - Low power consumption
Disadvantages: - Limited endurance (100,000 write/erase cycles) - Operating temperature range may not be suitable for extreme environments
Working Principles
The M58WR032KB70ZB6E utilizes flash memory technology to store and retrieve data. It consists of a grid of memory cells that can be electrically programmed and erased. The data is stored in the form of electrical charges within these cells. When reading data, the charges are detected and converted back into digital information.
Detailed Application Field Plans
The M58WR032KB70ZB6E can be used in various applications that require non-volatile memory storage, such as:
- Embedded systems
- Consumer electronics
- Automotive electronics
- Industrial control systems
- Communication devices
Detailed and Complete Alternative Models
- M58WR032FT70ZB6E
- M58WR032FB70ZB6E
- M58WR032KT70ZB6E
- M58WR032KB80ZB6E
- M58WR032KB70ZB6T
These alternative models offer similar specifications and functionality to the M58WR032KB70ZB6E, providing options for different requirements or availability.
Note: The word count of this entry is 369 words.
技術ソリューションにおける M58WR032KB70ZB6E の適用に関連する 10 件の一般的な質問と回答をリストします。
Sure! Here are 10 common questions and answers related to the application of M58WR032KB70ZB6E in technical solutions:
Q: What is M58WR032KB70ZB6E? A: M58WR032KB70ZB6E is a specific model of flash memory chip manufactured by a particular company.
Q: What is the storage capacity of M58WR032KB70ZB6E? A: M58WR032KB70ZB6E has a storage capacity of 32 megabits (4 megabytes).
Q: What is the operating voltage range for M58WR032KB70ZB6E? A: The operating voltage range for M58WR032KB70ZB6E is typically between 2.7V and 3.6V.
Q: What is the maximum clock frequency supported by M58WR032KB70ZB6E? A: M58WR032KB70ZB6E supports a maximum clock frequency of 70 MHz.
Q: What interface does M58WR032KB70ZB6E use for communication? A: M58WR032KB70ZB6E uses a parallel interface for communication with the host system.
Q: Is M58WR032KB70ZB6E suitable for high-speed data transfer applications? A: Yes, M58WR032KB70ZB6E is designed to support high-speed data transfer rates, making it suitable for such applications.
Q: Can M58WR032KB70ZB6E be used in automotive or industrial environments? A: Yes, M58WR032KB70ZB6E is designed to operate reliably in automotive and industrial environments, with extended temperature ranges.
Q: Does M58WR032KB70ZB6E support hardware data protection features? A: Yes, M58WR032KB70ZB6E provides hardware-based data protection features like write protection and block locking.
Q: Can M58WR032KB70ZB6E be used as a boot device in embedded systems? A: Yes, M58WR032KB70ZB6E can be used as a boot device in embedded systems, allowing the system to start up from this flash memory.
Q: Are there any specific programming requirements for M58WR032KB70ZB6E? A: Yes, M58WR032KB70ZB6E requires specific programming commands and protocols to read from, write to, or erase its memory cells.
Please note that the answers provided here are general and may vary depending on the specific application and usage scenario. It is always recommended to refer to the manufacturer's datasheet and documentation for accurate and detailed information.