M29W640FT70ZA6F TR

Product Overview

• Category: Flash Memory
• Use: Data storage and retrieval in electronic devices
• Characteristics: Non-volatile, high-density, fast read/write speeds
• Package: Surface mount package (TSOP)
• Essence: Stores digital information using floating gate transistors
• Packaging/Quantity: Available in reels or trays

Specifications

• Memory Capacity: 64 Megabits (8 Megabytes)
• Organization: 8M x 8 bits
• Supply Voltage: 2.7V to 3.6V
• Access Time: 70 nanoseconds
• Interface: Parallel
• Operating Temperature: -40°C to +85°C

Detailed Pin Configuration

The M29W640FT70ZA6F TR has the following pin configuration:

1. A0 - Address Input
2. A1 - Address Input
3. A2 - Address Input
4. A3 - Address Input
5. A4 - Address Input
6. A5 - Address Input
7. A6 - Address Input
8. A7 - Address Input
9. A8 - Address Input
10. A9 - Address Input
11. A10 - Address Input
12. A11 - Address Input
13. A12 - Address Input
14. A13 - Address Input
15. A14 - Address Input
16. A15 - Address Input
17. A16 - Address Input
18. A17 - Address Input
19. A18 - Address Input
20. A19 - Address Input
21. A20 - Address Input
22. A21 - Address Input
23. A22 - Address Input
24. A23 - Address Input
25. A24 - Address Input
26. A25 - Address Input
27. A26 - Address Input
28. A27 - Address Input
29. A28 - Address Input
30. A29 - Address Input
31. A30 - Address Input
32. A31 - Address Input
33. DQ0 - Data Input/Output
34. DQ1 - Data Input/Output
35. DQ2 - Data Input/Output
36. DQ3 - Data Input/Output
37. DQ4 - Data Input/Output
38. DQ5 - Data Input/Output
39. DQ6 - Data Input/Output
40. DQ7 - Data Input/Output
41. WE# - Write Enable
42. CE# - Chip Enable
43. OE# - Output Enable
44. RP# - Ready/Busy Status
45. VCC - Power Supply
46. GND - Ground

Functional Features

• High-speed read and write operations
• Low power consumption
• Sector erase and byte programming capabilities
• Built-in error correction code (ECC)
• Software and hardware protection mechanisms

Advantages and Disadvantages

Advantages: - Large storage capacity - Fast access times - Non-volatile memory retains data even without power - Reliable and durable

Disadvantages: - Limited endurance (limited number of erase/write cycles) - Relatively higher cost compared to other memory technologies

Working Principles

The M29W640FT70ZA6F TR is based on the floating gate transistor technology. It uses a grid of transistors to store digital information. The presence or absence of an electrical charge on the floating gate determines the stored data. When reading, the charge level is detected, and when writing, the charge is modified using high voltages.

Detailed Application Field Plans

The M29W640FT70ZA6F TR is commonly used in various electronic devices, including: - Mobile phones - Tablets - Digital cameras - Set-top boxes - Printers - Automotive electronics

Detailed and Complete Alternative Models

Some alternative models to the M29W640FT70ZA6F TR include: - M29W640FB70N6E - M29W640GB70N6E - M29W640GT70N6E - M29W640KB70N6E

These models offer similar specifications and functionality, providing options for different application requirements.

Word count: 314 words